National Yang Ming Chiao Tung University

Industrial Technology Research Institute

Li Yuan Chang

Jr-Yu Chen

Yu-Chang Chen

Hsing Chen

Ping-Hsun Wu

Yen-Teng Ho

Horng-Show Koo

Ya Chung Yu

Chin Chung Nien

Jenn Hwan Tarng

Wei-Chun Chen

Jun Yen Huang

Pei-Yin Lin

Chen Ming Li

Kun-An Chiu

K L Shieh

A method for growing aluminum indium nitride (AlInN) films on silicon substrates comprises several steps: firstly, arranging a silicon substrate in a reaction chamber; secondly, providing multiple reaction gases in the reaction chamber, wherein the reaction gases include aluminum precursors, indium precursors and nitrogen-containing gases; finally, dynamically adjusting flow rates of the reaction gases and directly growing an AlInN layer on the silicon substrate via a crystal growth process. By directly forming an AlInN layer on the silicon substrate, lattice matching is increased, residual thermal stress is reduced and film quality is improved. In addition, fabrication process is simplified and thus cost is reduced.

Method for growing aluminum indium nitride films on silicon substrate

A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.

Method for growing epitaxial diamond

The present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained.

Method of growing diamond thin film

The present invention relates to a method for growing a novel non-polar (130) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (130) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (130) plane obtained according to the aforementioned method.

Non-polar plane of wurtzite structure material

An antenna structure comprises a substrate, a first antenna unit and a second antenna unit. The substrate comprises a first surface and a second surface opposing the first surface. The first antenna unit is disposed on the first surface, and comprises at least a first slot with a wider inside and narrower outside at the edge of the first antenna unit. The second antenna unit is disposed on the second surface, and is connected to the first antenna unit through a hole in the substrate. The radius of the at least one first slot is one-fourth the wavelength of the central frequency of the antenna structure.

Antenna structure and multi-beam antenna array using the same

An apparatus for extinguishing a lighted cigarette comprises a hollow external seat and a storing container. A blade for cutting and extinguishing the burning portion of a lighted cigarette in combination with an L-shaped plate are provided within a seat. Both the plates are made from shape memory alloys having different temperature reaction gradients. When the burning portion of a cigarette is placed into the seat and comes into contact with the blade, the plate will restore to its memory shape by the temperature response in cutting off the lighted portion of the cigarette and extinguishing the lighted portion by pressing it on the L-shaped plate. The L-shaped plate stretches straight to let the cigarette ash drop into the storing container. When the temperature of the L-shaped plate is decreased, the plate recovers to its original position to cover the storing container. The cigarette ash is thus restricted within the storing container to prevent it from dispersing and causing pollution. A lighter is detachably inserted into the apparatus and facilitates carrying and provides a safe and clean environment.

Apparatus for extinguishing a lighted cigarette

Growing community of inventors

Taipei, Taiwan

Li Yuan Chang