Applied Materials, Inc.

Tokyo Electron Limited

Li Wu

David Walter Groechel

Mei Yin Chang

Frederick C Wu

Robert T Lum

Chiu Chan

Ramanujapuram A Srinivas

Toshio Itoh

Anand Vasudev

Dorothea Buechel-Rimmel

Brian Boyle

Ming Xi

Fufa Chen

Tuochuan Huang

Young Jeen Paik

Han Wang

Shawyon Jafari

Chidambara A Ramalingam

Jenn C Chow

Yin Lin

Kirubanandan Naina Shanmugam

Sourabh Mishra

Jianhua Hu

Gang Peng

Elina Szeto

Michael Kwon

Satyasrayan Kumaraswamy

Ramamujapuram A Srinivas

Katty Guyomard

Palash Joshi

Moin Ahmed Khan

Avishek Ghosh

Subhaschandra Shreepad Salkod

Embodiments described herein relate to chamber component cleaning systems and methods for cleaning a chamber component. The chamber component cleaning system includes a spray station, at least a first cleaning station, a dry station, a component transfer mechanism, and one or more enclosures that enclose the spray station, at least the first cleaning station, the dry station, and the component transfer mechanism. The spray station has a holder to position a chamber component in a path of a flow of a cleaning spray and a movable nozzle to provide the flow of the cleaning spray at a first pressure in a path of portions of the chamber component. The first cleaning station has a push mechanism to force a cleaning fluid through features and/or holes of the chamber component and at least one movable transducer to provide ultrasonic energy to the portions of the chamber component.

Integrated semiconductor part cleaning system

Exemplary semiconductor chamber component cleaning systems may include a receptacle. The receptacle may include a bottom lid that may be an annulus. The annulus may be characterized by an inner annular wall and an outer annular wall. A plurality of recessed annular ledges may be defined between the inner annular wall and the outer annular wall. Each recessed annular ledge of the plurality of recessed annular ledges may be formed at a different radial position along the bottom lid. The cleaning systems may include a top lid removably coupled with the bottom lid about an exterior region of the top lid. The cleaning systems may include a tank defining a volume to receive the receptacle.

Semiconductor chamber component cleaning systems

One or more features of multiple patterned layers formed on a semiconductor are determined by obtaining a first measured diffraction signal measured from a first patterned layer before a second patterned layer is formed on top of the first patterned layer. One or more features of the first patterned layer are determined using the first measured diffraction signal. Values of one or more profile parameters of a hypothetical profile of the second patterned layer in combination with the first patterned layer are fixed. A second measured diffraction signal measured from the second patterned layer after the second patterned layer has been formed on top of the first patterned layer is obtained. One or more features of the second patterned layer are determined based on the second measured diffraction signal and the fixed values of the one or more profile parameters.

Optical metrology of multiple patterned layers

Generally, a method and apparatus for processing a substrate. In one embodiment, the method provides a first relative motion between at least a first substrate and a polishing material. A second relative motion is provided between at least a second substrate and the polishing material. The changing in direction of the relative motion extends the interval between conditioning procedures used to return the polishing material to a state that produces uniform polishing results.

System and method for chemical mechanical planarization

A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner sur aces of the chamber prior to utilizing the chamber for he deposition of such material. The protective layer is replenished following each two-stage cleaning.

Computer readable medium for controlling a method of cleaning a process chamber

Tungsten CMP is conducted with improved alignment mark integrity and reduced edge residue by employing a retaining ring having a mechanical hardness greater than about 85 durometer and a relatively soft polishing pad. Embodiments of the present invention include conducting CMP employing a carrier comprising a retaining ring additionally having a wear rate during CMP of less than about 1 mil per hour and a polishing pad having a hardness less than about 60 durometer. Suitable retaining ring materials include ceramics, quartz, polymers and fiber reinforced polymers.

Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching

Method for passivating a layer of titanium that has been deposited on a substrate in a reaction chamber to coat the titanium thereby reducing the likelihood of contamination by byproducts of the deposition process or ambient oxygen or similar reactants. The method includes adding a flow of hydrogen and a flow of nitrogen to the chamber. The flows of hydrogen and nitrogen are approximately 800 sccm and continue for approximately 10-30 seconds respectively. The method may further comprise the step of forming a nitrogen plasma in the chamber for approximately 10 seconds wherein such case the flows of hydrogen and nitrogen continue for approximately 8 seconds respectively. The plasma is formed by applying RF power to an electrode located within said chamber or by a remote plasma source and channeled to said reactor chamber. Alternately, the passivation layer may be formed just by using a nitrogen plama alone for approximately 10-30 seconds at the same RF power level. The plasma in either case may further comprise hydrogen and argon and the layer of titanium has been deposited by CVD.

Method for in-situ, post deposition surface passivation of a chemical vapor deposited film

A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.

Method for cleaning a process chamber

The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi,) and ammonia (NH,). A Ti film is subject to a treatment of NH,gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl,/NH,reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 &angst;.

Method of performing titanium/titanium nitride integration

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Fremont, CA, United States of America

Li Wu