Taiwan Semiconductor Manufacturing Comp. Ltd.

Li Te Hsu

Pin Chia Su

Fang-Cheng Chen

Po-Zen Chen

Hung Jui Chang

Chung-Bin Tseng

Jeng Chang Her

Yu-Sheng Su

Tai-Yung Yu

Chia-Tsung Tso

Chiang Jen Peng

Mei-Jen Wu

Chia Lun Chen

Tsung Chuan Chen

Jin Lin Liang

Shih Cheng Yeh

Jiun-Hong Lai

I Cheng Tseng

Hsu Chiung Wen

Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and more particularly, a method of forming a dielectric film in a radiation-absorption region without using a conventional plasma etching causing roughness on the surface and non-uniformity within a die and a wafer. The method includes providing layers comprising a substrate having radiation sensors adjacent its front surface, an anti-reflective layer formed over the back surface of the substrate, a sacrificial dielectric layer formed over the anti-reflective layer, and a conductive layer formed over the sacrificial dielectric layer in a radiation-blocking region. The method further includes removing the sacrificial dielectric layer in the radiation-absorption region completely by a highly selective etching process and forming a dielectric film on the anti-reflective layer by deposition such as CVD or PVD while precisely controlling the thickness.

Backside illuminated image sensor device having an oxide film and method of forming an oxide film of a backside illuminated image sensor device

A chemical processing bath and system used in semiconductor manufacturing utilizes a dynamic spiking model that essentially constantly monitors chemical concentration in the processing bath and adds fresh chemical on a regular basis to maintain chemical concentrations at desirable levels. Etch rates and etch selectivities are maintained at desirable levels and contamination from undesirable precipitation is avoided. The system and method automatically compare concentration levels to a plurality of control limits associated with various technologies and identify the technology or technologies that may undergo processing.

Method and system for improving wet chemical bath process stability and productivity in semiconductor manufacturing

A method of controlling gate formation of semiconductor devices includes determining the correlation between the step heights of isolation structures and the over-etching time by measuring step heights of isolation structures, determining an over-etching time based on the step heights, and etching gates using the over-etching time. The method may include an after-etching-inspection to measure the gate profile and fine-tune the gate formation control. Within-wafer uniformity can also be improved by measuring the step height uniformity on a wafer and adjusting gate formation processes.

Controlling system for gate formation of semiconductor devices

A method for controlling a critical dimension in an etched structure comprises the steps of: forming a hard mask above a substrate, measuring a critical dimension of the hard mask, and using the measured hard mask critical dimension to control a critical dimension trim operation performed on a circuit trace above the substrate.

Critical dimension control in a semiconductor fabrication process

A method for reducing the loss of silicon in a plasma assisted photoresist etching process including providing a silicon substrate including a polysilicon gate structure; masking a portion of the silicon substrate with photoresist to carry out an ion implantation process for forming source and drain regions; carrying out an ion implantation process; and, removing the photoresist according to at least one plasma assisted process wherein the at least one plasma assisted process comprises fluorine containing, oxygen, and hydrogen containing plasma source gases.

Plasma treatment method to reduce silicon erosion over HDI silicon regions

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Tainan, Taiwan

Li Te Hsu