Qualcomm Incorporated

Intel Corporation

Xilinx, Inc.

Li-Sheng Weng

Chung-Hao Chen

Yangyang Sun

Kemal Aygun

Suresh Ramalingam

Mitul Bharat Modi

Hong Shi

Wei-Lun Kane Jen

Ryan David Lane

Yue Li

Yun Ling

Charles David Paynter

Emile Davies-Venn

Min Keen Tang

Chi-Te Chen

Olivia Chen

Hong Bok We

James Chris Matayabas, Jr

Rajneesh Kumar

Jaehyun Yeon

Darryl Sheldon Jessie

Suhyung Hwang

Jianwen Xu

Jeahyeong Han

Lily Zhao

Chaoqi Zhang

William Michael Stone

Xiaoming Chen

Po-Wei Chiu

Rong Zhou

Zhimin Song

Alexander Helmut Pfeiffenberger

Tzu-No Chen

Chun-Yuan Cheng

Eric David Foronda

Young Soo Lee

Chao-Chin Lee

Chip packages are described herein that includes integrated passive devices embedded in a core of a substrate of the chip package, such as a package substrate or an interposer, that shield routings coupled to inductors from adjacent through-substrate conductive paths (e.g., vias). In one example, a chip package includes an integrated circuit (IC) die mounted to a substrate. A core of the substrate has a plurality of inductor routing vias, a plurality of signal transmission vias, and a plurality of ground and power routing vias. A first integrated passive device (IPD) is disposed in the core and separates at least one of the plurality of inductor routing vias from an adjacent via, the adjacent via being one of the plurality of signal transmission vias or one of the plurality of ground and power routing vias.

Chip package with core embedded integrated passive device

A package that includes a substrate comprising a cavity, a first integrated device coupled to the substrate through a first plurality of pillar interconnects and a first plurality of solder interconnects, a second integrated device coupled to the substrate through a second plurality of pillar interconnects and a second plurality of solder interconnects, and a plurality of wire bonds coupled to the first integrated device and the second integrated device, wherein the plurality of wire bonds is located over the cavity of the substrate.

Package comprising wire bonds coupled to integrated devices

A chip package and methods for fabricating the same are provided that include integrated devices embedded and coupled in series between a lower surface of a package substrate and an integrated circuit die of the chip package. In some examples, the integrated devices are disposed side by side embedded in a common package substrate. In other examples, one of the series coupled integrated devices is embedded in a first package substrate while another of the series coupled integrated devices is embedded in a second package substrate that is stacked directly in contact with the first package substrate. The integrated devices may be passive and/or active integrated devices.

Chip package with core embedded integrated devices

A chip package and method for fabricating the same are provided that includes a power delivery network (PDN) with non-uniform electrical conductance. The electrical conductance through each current path of the PDN may be selected to balance the distribution of current flow across the current paths through the chip package, thus compensating for areas of high and low current draw found in conventional designs.

Chip package with integrated current control

Disclosed herein is a chip package and method for fabricating the same are provided that includes a redistribution layer (RDL) with a plurality of loop and void structures. The chip package includes an integrated circuit (IC) die, and a package substrate. The RDL is disposed between the IC die and the package substrate. The RDL has RDL circuitry that connects the IC die to the package substrate. The RDL circuitry includes a first coil formed in a first metal layer and a second coil formed in a second metal layer. A first end of the second coil is coupled to a second end of the first coil by a first via. A second end of the second coil is the IC die.

Coupled loop and void structure integrated in a redistribution layer of a chip package

A package comprising a substrate, a first integrated device coupled to the substrate, a second integrated device coupled to the substrate, an interconnect integrated device coupled to the first integrated device and the second integrated device, and an underfill. The substrate includes a cavity. The interconnect integrated device is located over the cavity of the substrate. The underfill is located (i) between the first integrated device and the substrate, (ii) between the second integrated device and the substrate, (iii) between the interconnect integrated device and the first integrated device, and (iv) between the interconnect integrated device and the second integrated device.

Package comprising a substrate and a high-density interconnect integrated device

A chip package and method for fabricating the same are provided that includes a near-die integrated passive device. The near-die integrated passive device is disposed between a package substrate and an integrated circuit die of a chip package. Some non-exhaustive examples of an integrated passive device that may be disposed between the package substrate and the integrated circuit die include a resistor, a capacitor, an inductor, a coil, a balum, or an impedance matching element, among others.

Chip package with near-die integrated passive device

A package comprising a first integrated device comprising a plurality of first pillar interconnects; an encapsulation layer at least partially encapsulating the first integrated device; a metallization portion located over the first integrated device and the encapsulation layer, wherein the metallization portion includes at least one passivation layer and a plurality of metallization layer interconnects, wherein the plurality of first pillar interconnects is coupled to the plurality of metallization layer interconnects; and a second integrated device comprising a plurality of second pillar interconnects, wherein the second integrated device is coupled to the plurality of metallization layer interconnects through a plurality of second pillar interconnects and a plurality of solder interconnects.

Package comprising integrated devices coupled through a metallization layer

An integrated device that includes a substrate, an interconnect portion and an interconnect structure. The interconnect portion is located over the substrate. The interconnect portion includes a plurality of interconnects and at least one dielectric layer. The interconnect structure is located over the interconnect portion. The interconnect structure includes an inner interconnect, a dielectric layer coupled to the inner interconnect, and an outer conductive layer coupled to the dielectric layer. The outer conductive layer is configured to operate as a shield for the inner interconnect.

Integrated device comprising interconnect structures having an inner interconnect, a dielectric layer and a conductive layer

A package comprising a substrate, an integrated device, and an interconnect integrated device. The substrate includes a first surface and a second surface. The substrate further includes a plurality of interconnects. The integrated device is coupled to the substrate. The interconnect integrated device is coupled to a surface of the substrate. The integrated device, the interconnect integrated device and the substrate are configured to provide an electrical path for an electrical signal of the integrated device, that travels through at least the substrate, then through the interconnect integrated device and back through the substrate.

Package comprising a substrate and a high-density interconnect integrated device coupled to the substrate

Disclosed is an apparatus including a molded multi-die high density interconnect including: a bridge die having a first plurality of interconnects and second plurality of interconnects. The apparatus also includes a first die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the first plurality of interconnects of the bridge die. The apparatus also includes a second die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the second plurality of interconnects of the bridge die. The coupled second plurality of contacts and interconnects have a smaller height than the first plurality of contacts of the first die and second die.

Multi-die interconnect

An integrated circuit (IC) package is described. The IC package includes a die, having a pad layer structure on back-end-of-line layers on a substrate. The die also includes a metallization routing layer on the pad layer structure, and a first under bump metallization layer on the metallization routing layer. The IC package also includes a patterned seed layer on a surface of the die to contact the first under bump metallization layer. The IC package further includes a first package bump on the first under bump metallization layer.

Repurposed seed layer for high frequency noise control and electrostatic discharge connection

A microelectronic package may be fabricated with a microelectronic substrate, a microelectronic die electrically attached to the microelectronic substrate, and an electromagnetic interference shield layer contacting one or both of the microelectronic substrate and the microelectronic die, wherein the electromagnetic interference shield layer has an electrical conductivity between about 10,000 siemens per meter and 100,000 siemens per meter. The specific range of electrical conductivity results in electromagnetic fields either generated by the microelectronic die or generated by components external to the microelectronic package scattering within the electromagnetic interference shield layer and attenuating. Thus, the electromagnetic interference shield layer can prevent electromagnetic field interference without the need to be grounded.

Microelectronic package having electromagnetic interference shielding

A package that includes a substrate having a routing region and a non-routing region along a periphery of the substrate. The non-routing region includes a plurality of vias configured as a shield. The package includes an integrated device coupled to the substrate, and an encapsulation layer located over the substrate such that the encapsulation layer encapsulates the integrated device.

Package comprising a substrate having a via wall configured as a shield

Disclosed is a microelectronics package. The microelectronics package may include a reference plane, a signal routing layer, a dielectric layer, and a conductive layer. The signal routing layer may include a plurality of signal routing traces. The dielectric layer may be located adjacent to the signal routing layer. The conductive layer may be applied to the dielectric layer such that the dielectric layer is located in between the signal routing layer and the conductive layer. The conductive layer may be in electrical communication with the reference plane.

Growing community of inventors

San Diego, CA, United States of America

Li-Sheng Weng