Applied Materials, Inc.

Li Ling

Daisuke Shimizu

Kenny Linh Doan

Wonseok Lee

Kevin Choi

Srinivas D Nemani

Kenji Takeshita

Jong Mun Kim

Katsumasa Kawasaki

Justin Phi

Jairaj Joseph Payyapilly

Usama Dadu

Yuju Huang

Hikaru Watanabe

Methods and apparatus for etching a substrate in a plasma etch chamber are provided. In one example, the method includes exposing a substrate disposed on a substrate supporting surface of a substrate support to a plasma within a processing chamber, and applying a voltage waveform to an electrode disposed in the substrate support while the substrate is exposed to the plasma during a plurality of macro etch cycles. Each macro etch cycle includes a first macro etch period and a second macro etch period. The macro etch period includes a plurality of micro etch cycles. Each micro etch cycle has a bias power on (BPON) period and a bias power off (BPOFF) period, wherein a duration of the BPON period being less than a duration of the BPOFF period. Bias power is predominantly not applied to the electrode during the second macro etch period.

Method and apparatus for etching a semiconductor substrate in a plasma etch chamber

Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

Using bias RF pulsing to effectively clean electrostatic chuck (ESC)

Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level, a second power level, and a third power level, providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level, a second power level, and a third power level, and processing the substrate using the first multi-level RF power waveform and the second multi-level RF power waveform to produce a features on the substrate have an aspect ratio of greater than 60:1 while maintaining an etch rate of greater than 170 nm/min.

Smart multi-level RF pulsing methods

An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising CFHin a chamber of an etch reactor, ionizing the CFHcontaining gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.

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San Jose, CA, United States of America

Li Ling