Taiwan Semiconductor Manufacturing Comp. Ltd.

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Li Chun Liu

Yu-Lung Yeh

Ching Feng Lee

Chun Tang Wang

Chih Hung Wang

A semiconductor device includes an ultra-thick metal (UTM) structure. The semiconductor device includes a passivation layer including a first passivation oxide. The first passivation oxide includes an unbias film and a first bias film, where the unbias film is on portions of the UTM structure and on portions of a layer on which the UTM structure is formed, and the first bias film is on the unbias film. The passivation layer includes a second passivation oxide consisting of a second bias film, the second bias film being on the first bias film. The passivation layer includes a third passivation oxide consisting of a third bias film, the third bias film being on the second bias film.

Passivation layer for a semiconductor device and method for manufacturing the same

A pendulum device includes a base. A rotating plate is pivoted on the base. A movable member is eccentrically pivoted on the rotating plate by one of two ends thereof, and the other end of the movable member is for connecting to an article to be operated. A driving unit is at one side of the base. The driving unit is for driving the rotating plate of the base to perform a uniform circular motion. Because of the movable member eccentrically pivoted on the rotating plate, when the operating end is connected to the article, the operating end is dragged by the transmission of the rotating plate to perform a simple harmonic motion that is a variable accelerating linear motion relative to the rotating plate.

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Kaohsiung, Taiwan

Li Chun Liu