Taiwan Semiconductor Manufacturing Comp. Ltd.

Li-Chih Lu

Cheng-Ming Lin

Hao-Ming Chang

Shao-Chi Wei

Sheng-Chang Hsu

Chih-Ming Chen

Min-An Yang

Kuo-Chin Lin

Hsao Shih

A method for processing a substrate is provided. The method includes supplying a first flow of a chemical solution into a processing chamber, configured to process the substrate, via a first dispensing nozzle. The method further includes producing a first thermal image of the first flow of the chemical solution. The method also includes performing an image analysis on the first thermal image. In addition, the method includes moving the substrate into the processing chamber when the result of the analysis of the first thermal image is within the allowable deviation from the baseline.

Method and system for processing substrate by chemical solution in semiconductor manufacturing fabrication

A method of fabricating a photomask includes providing a mask blank; removing a portion of the resist layer to form a patterned resist layer exposing a portion of the cooling layer; patterning the cooling layer by using the patterned resist layer as an etching mask; patterning the opaque layer; and removing the patterned resist layer and the patterned cooling layer. The mask blank includes a light-transmitting substrate and an opaque layer, a cooling layer, and a resist layer sequentially stacked thereon, wherein the cooling layer has a thermal conductivity ranging between 160 and 5000 and an effective atomic number ranging between 5 and 14.

Mask blank and fabrication method thereof, and method of fabricating photomask

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Taichung, Taiwan

Li-Chih Lu