Cornell University

Leslie H Allen

David Stanasolovich

James W Mayer

Mayer, James W

An improved process for preparing selective deposition of conductive metals on disilicide encroachment barriers allows the construction of integrated circuit components wherein the metal/disilicide interface is substantially free of O and/or F contamination. The level of interfacial oxygen and/or fluorine contamination in the selective W deposition on the TiSi.sub.2 was substantially reduced or eliminated by first forming a C49 TiSi.sub.2 phase on a substrate, selectively depositiong W on the C49 TiSi.sub.2 phase and thereafter annealing a a (minimum) temperature sufficient to convert the high resistivity phase C49 TiSi.sub.2 to the low resistivity phase C54 TiSi.sub.2.

Selective deposition of tungsten on TiSi.sub.2

An improved process for preparing selective deposition of conductive metals on disilicide encroachment barriers allows the construction of integrated circuit components wherein the metal/disilicide interface is substantially free of O and/or F contamination. The level of interfacial oxygen and/or fluorine contamination in the selective W deposition on the TiSi.sub.2 was substantially reduced or eliminated by first forming a C49 TiSi.sub.2 phase on a substrate, selectively depositing W on the C49 TiSi.sub.2 phase and thereafter annealing at a (minimum) temperature sufficient to convert the high resistivity phase C49 TiSi.sub.2 to the low resistivity phase C54 TiSi.sub.2.

Growing community of inventors

Champaigne, IL, United States of America

Leslie H Allen