Other

Hughes Aircraft Company

Hughes Electronics Corporation

Solus Micro Technologies, Inc.

LeRoy H Hackett

Randall Lynn Kubena

Michael J Little

William P Robinson

Philip G Reif

A method of making a micro electromechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

Single crystal, dual wafer, tunneling sensor and a method of making same

A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

Single crystal dual wafer, tunneling sensor and a method of making same

A membrane-actuated charge controlled mirror (CCM) that exhibits increased deflection range, reduced beam current and improved electrostatic stability is fabricated using a combination of flat panel manufacturing along with traditional MEMS techniques. More specifically, a unique combination of five masking layers is used to fabricate a number of CCMs on a large glass panel. At the completion of the MEMS processing, the glass panel is diced into individual CCMs. Thereafter, the polymer mirror and membrane release layers are simultaneously released through vent holes in the membrane to leave the free-standing CCM.

Method of fabricating a membrane-actuated charge controlled mirror (CCM)

A micro-dimensional coupling conductor with a shape that is customized for a particular electronic device. A fabrication method is used in which the physical dimensions of the conductor are precisely controlled with photolithographic techniques, resulting in a conductor that is more precisely tuned to the operating frequency of the device. The conductor is fabricated on an SiO.sub.2 substrate using vacuum deposition techniques. After fabrication, the conductor is separated from the SiO.sub.2 substrate by dissolving the SiO.sub.2. Alternatively, the conductor may be fabricated on a Teflon.TM. substrate. The use of a Teflon substrate allows a user to remove the conductor from the substrate by applying a small mechanical force to the conductor.

Micro-dimensional coupling conductor

A micro-dimensional coupling conductor with a shape that is customized for a particular electronic device. A fabrication method is used in which the physical dimensions of the conductor are precisely controlled with photolithographic techniques, resulting in a conductor that is more precisely tuned to the operating frequency of the device. The conductor is fabricated on an SiO.sub.2 substrate using vacuum deposition or electroplating techniques. After fabrication, the conductor is separated from the SiO.sub.2 substrate by dissolving the SiO.sub.2. Alternatively, the conductor may be fabricated on a Teflon.TM. substrate. The use of a Teflon substrate allows a user to remove the conductor from the substrate by applying a small mechanical force to the conductor.

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Woodland Hills, CA, United States of America

LeRoy H Hackett