Lam Research Corporation

Leonid Belau

Eric A Hudson

John Patrick Holland

Alexei Marakhtanov

Mark Henry Wilcoxson

Scott Briggs

Youn-Jin Oh

Francis Sloan Roberts

Andrew Clark Serino

Rui Takahashi

Yilun Li

Wonjae Lee

Various embodiments herein relate to methods and apparatus for etching recessed features on a semiconductor substrate. The techniques described herein can be used to form high quality recessed features with a substantially vertical profile, low bowing, low twisting, and highly circular features. These high quality results can be achieved with a high degree of selectivity and a relatively high etch rate. In various embodiments, etching involves exposing the substrate to plasma generated from a processing gas that includes a chlorine source, a carbon source, a hydrogen source, and a fluorine source. The chlorine source may have particular properties. In some cases, particular chlorine sources may be used. Etching typically occurs at low temperatures, for example at about 25 C or lower.

High aspect ratio dielectric etch with chlorine

A wafer is supported on a wafer support structure such that a lower peripheral open region exists between a peripheral portion of a bottom surface of the wafer and an edge ring structure. The edge ring structure is configured to circumscribe both the wafer support structure and the wafer. A plasma is generated above a top surface of the wafer. The plasma causes accumulation of byproduct material within the lower peripheral open region. A byproduct volatizing gas is supplied to the lower peripheral open region to control the accumulation of the byproduct material within the lower peripheral open region during generation of the plasma. Use of the byproduct volatizing gas to control the accumulation of the byproduct material within the lower peripheral open region serves to prevent electrical arcing and particle contamination.

Methods and systems for managing byproduct material accumulation during plasma-based semiconductor wafer fabrication process

A method for etching features in a silicon containing stack below a patterned mask is provided. The stack is partially etched by providing a halogen containing etch gas and forming the halogen containing etch gas into a halogen containing plasma, wherein the halogen containing plasma partially etches features with an etch front. A metal catalyst containing layer is deposited on the etch front of the features by providing a metal catalyst containing gas, forming the metal catalyst containing gas into a plasma, and selectively depositing more of the metal catalyst containing layer on the etch front and bottoms of the features than tops of the features. The features are further etched by providing a fluorine containing etch gas and forming a fluorine containing plasma, wherein the plasma selectively etches sidewalls adjacent to the etch front of the features with respect to sidewalls adjacent to tops of the features.

Profile optimization for high aspect ratio memory using an etch front metal catalyst

Provided herein are methods and apparatus for processing a substrate by exposing the substrate to plasma to simultaneously (i) etch features in an underlying material (e.g., which includes one or more dielectric materials), and (ii) deposit a upper mask protector layer on a mask positioned over the dielectric material, where the upper mask protector layer forms on top of the mask in a selective vertically-oriented directional deposition. Such methods and apparatus may be used to achieve infinite etch selectivity, even when etching high aspect ratio features.

High aspect ratio etch with infinite selectivity

A method for etching features in a stack below a carbon containing mask is provided. The stack is cooled to a temperature below &#x2212;20&#xb0; C. An etch gas is provided comprising a free fluorine providing component, a hydrogen containing component, a hydrocarbon containing component, and a fluorocarbon containing component. A plasma is generated from the etch gas. A bias is provided with a magnitude of at least about 400 volts to accelerate ions from the plasma to the stack. Features are selectively etched in the stack with respect to the carbon containing mask.

Method for etching features in a stack

A method for etching features in a silicon oxide containing etch layer disposed below a patterned mask in a chamber is provided. An etch gas comprising a tungsten containing gas is flowed into the chamber. The etch gas comprising the tungsten containing gas is formed into a plasma. The silicon oxide etch layer is exposed to the plasma formed from the etch gas comprising the tungsten containing gas. Features are etched in the silicon oxide etch layer while exposed to the plasma formed from the etch gas comprising the tungsten containing gas.

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Pleasanton, CA, United States of America

Leonid Belau