Axcelis Technologies, Inc.

Leonard Michael Rubin

Ivan Berry

Klaus Becker

Marvin Raymond LaFontaine

Yuri Erokhin

Alfred Mike Halling

Michael Pharand

Shaun Dean Wilson

Walter Class

The present invention involves an ion beam angular measurement apparatus for providing feedback for a predetermined set ion beam angle comprising an arrangement of composite pillars formed on an insulating material and wherein the composite pillars selectively allow ion beams to penetrate a first layer of a pillar, wherein resistivity measurements are taken for each of the composite pillars before and after test ion beam implantation and wherein the resistivity measurements yield information relating to an angle of the ion beam during test.

Structures and methods for measuring beam angle in an ion implanter

A method for manufacturing a semiconductor wafer electrostatic clamp, comprising providing a mounting plate, forming an insulative layer on an insulating portion of the mounting plate, forming a first electrode on a first portion of the mounting plate, forming a second electrode on a second portion of the mounting plate, forming a first segment having a first conductivity over the first electrode, forming a first region having a second conductivity over the first segment that creates an n-p type composite, forming a second segment having a third conductivity formed over the over the second electrode, forming a second region having a fourth conductivity formed over the second region that creates an p-n type composite.

Low-cost electrostatic clamp with fast de-clamp time

The present invention includes an angle adjuster that alters the path of an ion beam prior to contacting a target wafer. The path is altered according to a target position on the wafer in one or two dimensions in order to compensate for angle variations inherent in batch ion implantation system. The angle adjuster comprises one or more bending elements that controllably alter the path of the ion beam during ion implantation. As a result, the target wafer can be implanted with a substantially uniform implant angle.

Beam angle control in a batch ion implantation system

A Rutherford backscattering detector for determining the angle of incidence between an ion beam and the crystalline lattice structure of a semiconductor workpiece. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment, and a rotating workpiece support is disposed within the process chamber for mounting one or more semiconductor workpieces. An energy source sets up an ion plasma from which is created an ion beam which is caused to impact the surface of the semiconductor workpiece. A Rutherford backscattering detector measures the intensity of backscattered particles and the backscattered ion intensity is correlated to an angle of incidence between the ion beam and the crystalline structure of the semiconductor workpiece.

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S. Hamilton, MA, United States of America

Leonard Michael Rubin