Massachusetts Institute of Technology

Leonard J Mahoney

Arthur R Calawa

Frank W Smith

Chang-Lee Chen

Michael J Manfra

A new III-V buffer or passivation material is described which is produced by low temperature growth (LTG) of III-V compounds. The material has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor FET devices, such as HEMT's, MESFET's and MISFET's. The LTG material is grown under ambient conditions which incorporate an excess of the more volatile of the III-V species into the grown material. The new material is crystalline, highly resistive, relatively insensitive to light, and can be overgrown with high quality III-V active layers or used as a passivation material to insulate and protect active device structures.

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East Walpole, MA, United States of America

Leonard J Mahoney