Siemens Aktiengesellschaft

Infineon Technologies Ag

Siemens Aktiengesellschaft & Semikron Gmbh

Leo Lorenz

Herbert Schwarzbauer

Manfred Bruckmann

Michael Kaindl

Peter Stern

Gerhard M&uuml;nzing

Manfred Br&uuml;ckmann

Heinz Amann

Ernst Hebenstreit

Frank Klotz

Winfried Schierz

Gerhard Münzing

A method for producing a microelectronic component of sandwich construction, which includes the steps of providing a first substrate which has a first conductor track plane, providing a plurality of semiconductor chips which have first contact faces electrically connected to the first conductor track plane, and second contact faces opposite the first sides. The method furthermore includes providing a second substrate which has a second conductor track plane with contact points, securing electrically conductive balls to the contact points of the second conductor track plane using an electrically conductive, flexible adhesive, applying an electrically conductive, flexible adhesive to the second contact faces of the plurality of semiconductor chips, and joining the first substrate and the second substrate together.

Method for producing a microelectronic component of sandwich construction

A power semiconductor array on a direct copper bonding (DCB) semiconductor substrate is created, in which the interference emissions propagated via its terminal lines are eliminated, or at least greatly reduced, directly on the semiconductor device. The power semiconductor array on the DCB substrate includes a first intermediate circuit terminal connected to a positive potential, a second intermediate circuit terminal connected to a negative potential, and at least one load terminal. The power semiconductor array further includes at least two power switches for connecting the load terminal to the first and second intermediate circuit terminals in alternation. The power semiconductor array is characterized by bridging connections that connect at least some of the terminals of the power semiconductor array that lead to the outside to one another in pairs, so that interference circuits within the power semiconductor array are closed.

Power semiconductor array on a DCB substrate

A microelectronic component of sandwich construction, that includes a first substrate with a first conductor track plane and a second substrate with a second conductor track plane, between which many semiconductor chips are disposed. The contacting of the second conductor track plane to the adjacent surface of the semiconductor chips is effected by fixed contacting means, in particular with the soldered connections, an electrically conductive adhesive, or electrically conductive balls. The microelectronic components of the invention are suitable in particular as power components and can be used for instance in inverters. The invention also relates to a method for producing the microelectronic component.

Microelectronic component of sandwich construction

A discretely constructed MOSFET is switched by a voltage applied between gate terminal and source terminal. The source terminal has a self-inductance in which a fast change of the load current induces a considerable voltage which opposes the applied gate-source bias. This opposing voltage is reduced since the source contact is connected to an auxiliary terminal which is largely magnetically decoupled from the source terminal. A control voltage is applied between gate terminal and auxiliary terminal. When a plurality of MOSFETs are connected in parallel, oscillations in the control circuit can thus be effectively suppressed.

Semiconductor component having at least one power MOSFET

In a semiconductor arrangement having at least one semiconductor body located on an insulating substrate provided with interconnects, a low-inductance arrangement can be achieved in that the connecting leads are arranged in close proximity to one another and at least partially parallel to one another.

Semiconductor arrangement having at least one semiconductor body

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Neubiberg, Germany

Leo Lorenz