Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Angang Steel Company Limited

Leng Zhang

Ming Zhao

Li Hui Guo

Ming-Jie Cao

Da-Ming Zhuang

Yao-Wei Wei

Yi Kang Sun

Liang-Qi Ouyang

Xu Yang

Jie Fu Na

Hao Dong Huang

Jie Liu

Long Zhen Li

Heng Lu Zhang

Fu Xing Jin

Xiao Chun Sha

Ming Ren Wang

Yong Gang Ma

A method for making a SnO thin film includes steps of: providing a substrate and a tin oxide sputtering target; spacing the substrate and the tin oxide sputtering target from each other; and sputtering the SnO thin film on the substrate by using a magnetron sputtering method. The tin oxide sputtering target comprises uniformly mixed elemental Sn and SnO. An atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2&#x3c;Sn:O&#x2266;2:1.

Method for making tin oxide thin film

An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising InCeZnO, wherein x=0.5&#x2dc;2.

Sputtering target, oxide semiconducting film, and method for making the same

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Beijing, China

Leng Zhang