Asml Netherlands B.v.

Leiwu Zheng

Yen-Wen Lu

Feng Chen

Jen-Shiang Wang

Mu Feng

Yongfa Fan

Qian Zhao

Rafael C Howell

Xi Chen

Yu Zhao

Mir Farrokh Shayegan Salek

Jin Cheng

Dianwen Zhu

Ziyang Ma

A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concentration of the etch step, and including a mathematical term including a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and adjusting the patterning process based on the determined etch bias.

Etch bias characterization and method of using the same

Methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust a parameter of the process model.

Methods of tuning process models

Growing community of inventors

San Jose, CA, United States of America

Leiwu Zheng