Applied Materials, Inc.

Lei Guo

Deenesh Padhi

Praket Prakash Jha

Sanjeev Baluja

Tza-Jing Gung

Ren-Guan Duan

Ajit Balakrishna

Kalyanjit Ghosh

Mayur G Kulkarni

Milind Gadre

Wei Min Chan

Gregory Siu

Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.

Method and system for high temperature clean

Aspects disclosed herein relate to methods of depositing pure silicon oxide on a substrate using Octamethylcyclotetrasiloxane (OMCTS) precursor. In one aspect, the method generally includes positioning a substrate in a processing chamber, introducing an oxygen-containing gas into the processing chamber, introducing OMCTS precursor into the processing chamber, and reacting the oxygen-containing gas and the OMCTS precursor to remove carbon and deposit pure silicon oxide on the substrate.

Oxide with higher utilization and lower cost

Growing community of inventors

Santa Clara, CA, United States of America

Lei Guo