Bell Telephone Laboratories

At&t Bell Laboratories

Western Electric Company, Inc.

American Telephone & Telegraph Co., At&t Bell Laboratories

LeGrand G Van Uitert

Shobha Singh

George J Zydzik

Irfan Camlibel

Douglas Arthur Pinnow

John Burnette MacChesney

David W Johnson, Jr

Aland K Chin

Henry Miles O'Bryan

Raymond Edward Jaeger

Howard Joseph Guggenheim

George J Przybylek

Mauro DiDomenico, Jr

Utpal K Chakrabarti

William H Grodkiewicz

Karen A Grim

Franklin Winston Dabby

This invention is directed to the fabrication of semiconductor devices, especially those comprising III-V and II-VI compound semiconductor materials, and involves Rapid Thermal Annealing (RTA) of semiconductor wafers, especially those implanted with a dopant(s). The invention is also concerned with a black-box implement used in combination with the RTA. The process includes enclosing a wafer to be annealed within a 'black-box' comprising components of a black body material and subjecting the black box with the wafer therein to an RTA. In a preferred embodiment the RTA comprises (a) a pre-anneal step which includes heating to a temperature and for a period sufficient to preheat the wafer so as to reduce thermal shock due to a main annealing step, (b) the main annealing step being at a temperature and for a period sufficient to remove damage caused to said surface by the dopant implantation and to activate implanted dopant, and (c) a post-anneal step carried out at a temperature and for a period sufficient to relieve stresses which may result from the main-annealing step. The combined use of the RTA and the black box leads to wafers substantially free or slip lines and with reproducibly high mobilities and uniform activation.

Procedure for rapid thermal annealing of implanted semiconductors

Disclosed is a device including a surface coating for passivation or anti-reflection, and a method of manufacture. The coating comprises ZrO.sub.2 doped with yttrium, magnesium or calcium. The doped ZrO.sub.2 is preferably deposited on the device surface by electron-beam evaporation from a single crystal source of ZrO.sub.2 and Y.sub.2 O.sub.3, MgO or CaO.

Coating for optical devices

A fabrication technique is described for making various devices in which a certain type of glass is used as a surface protection layer. The glass layers are formed by particle bombardment (generally sputtering or E-beam) of a glass target. Devices with such surface layers are also described. Such glass layers are highly advantageous as encapsulating layers, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures (i.e., in diffusion doping procedures) without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc., and can be removed by standard etching techniques.

Fabrication procedure using arsenate glasses

A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering) of a borosilicate glass target. Devices with such surface layers are also described. Such glass layers are highly advantageous as encapsulating material, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc.

Device fabrication procedure

Display devices are described in which certain structural features prevent cross-talk effects between individual display elements. This ensures sharp delineation between individual display elements which promotes high contrast and sharp displays. These structural features are particularly advantageous for multiplexed display systems so as to simplify circuit arrangements and ensure sharp, high-contrast displays.

Structure of display devices

Display devices are described which contain organic quinones or diones as active material. These devices exhibit high optical contrast, pleasing and striking colors and unusually low power consumption. Particularly advantageous is the fact that these display devices may exhibit non-linear behavior (sharp thresholds) which permit multiplexing. This is highly advantageous in display device applications.

Display devices

A process is described for producing devices and articles with gold films made by gold evaporation in which certain fluoride compounds are used to insure good adhesion of the gold film to the substrate. The process is particularly applicable to the production of gold films on non-metallic surfaces such as ceramic and glass surfaces. This procedure not only insures better adhesion of the gold film to the surface, but also permits greater processing variations without adversely affecting film adhesion.

Process for producing gold films

Display devices are described which contain, in addition to organic quinones and suitable organic solvent, a solid ionic conductor. Such display devices are advantageous because of exceptional persistence of the display. Thus, an image may be retained without application of electrical energy. In addition, these displays exhibit high optical contrast and low power consumption. Under certain conditions, these devices are non-linear (exhibit sharp thresholds) which permit multiplexing. This is highly advantageous in display device applications.

Persistent memory cell

An electrodeposition display device is described which uses an electrolyte containing silver species and certain anion species including iodide and bromide. The electrolyte also contains an opacifier made up of solid semiconductor substance and solid insulator substance. Such display devices have high contrast, large viewing angle and a pleasing variety of colors including blue, red and brown.

Electrodeposition display device

An electrodeposition display device is described which uses an electrolyte containing silver species and certain anion species including iodide bromide or chloride. The electrolyte also contains a substituted ammonium halide such as tetrabutyl ammonium iodide. Such display devices have high contrast, large viewing angle and rapid redissolution of the display.

Infrared detection and transmission apparatus are disclosed which incorporate an infrared transparent window consisting essentially of thorium fluoride. Due to high resistance to thermal shock, thorium fluoride window material may be used to advantage under extreme atmospheric conditions or for the transmission of infrared radiation at high power levels.

Infrared detection and transmission apparatus

A light guide is produced by the out-diffusion of boron oxide through a free surface of a uniform borosilicate mass. The resulting structure consists of increased index silica rich regions near the surface in contact with lower index regions of a composition approaching that of the unmodified borosilicate. The out-diffusion process, generally carried out at a temperature approaching the softening point of the glass, may be applied to a borosilicate tube to result in a fiber preform. Fibers drawn from such a preform may be characterized by a silica core region, a borosilicate clad region, and a silica outer shell. Use of the procedure results in a graded index structure.

Light guide fabrication

A method is disclosed for fabricating an optical fiber by drawing a preform whose manufacture involves the deposition of a borosilicate layer. The method calls for borosilicate deposition by high temperature pyrolysis of two gases, with processing parameters chosen so as to cause an acicular structure in the deposited layer, a structure which contributes to the uniformity of the drawn fiber.

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Morristown, NJ, United States of America

LeGrand G Van Uitert