Asml Netherlands B.v.

Leendert Jan Karssemeijer

Simon Gijsbert Josephus Mathijssen

Kaustuve Bhattacharyya

Ralph Brinkhof

Igor Matheus Petronella Aarts

Patricius Aloysius Jacobus Tinnemans

Sebastianus Adrianus Goorden

Haico Victor Kok

Henricus Johannes Lambertus Megens

Stefan Carolus Jacobus Antonius Keij

Joshua Adams

Manouk Rijpstra

Zahrasadat Dastouri

Samee Ur Rehman

Leonardo Gabriel Montilla

Nick Franciscus Wilhelmus Thissen

Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to ensure accurate exposure of one or more patterns on the substrate. An example method can include receiving measurement data indicative of an interference between light diffracted from a plurality of alignment marks disposed on a substrate or reflected from the substrate. The example method can further include determining substrate deformation data based on the measurement data. The example method can further include determining alignment mark deformation data based on the measurement data. The alignment mark deformation data can include alignment mark deformation spectral pattern data, alignment mark deformation amplitude data, and alignment mark deformation offset data. Subsequently, the example method can include determining a correction to the measurement data based on the substrate deformation data and the alignment mark deformation data.

Asymmetry extended grid model for wafer alignment

A method for a metrology process, the method includes obtaining first measurement data relating to a first set of measurement conditions and determining a first measurement recipe based on the first measurement data. At least one performance indicator is determined from one or more components of the first measurement data obtained from a component analysis or statistical decomposition. Alternatively, at least one performance indicator is determined from a comparison of one or more first measurement values relating to the first measurement recipe and one or more second measurement values relating to a second measurement recipe, where second measurement recipe is different to the first measurement data and relates a second set of measurement conditions, the second set of measurement conditions being different to the first set of measurement conditions.

Metrology method and associated metrology and lithographic apparatuses

A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

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s Hertogenbosch, Netherlands

Leendert Jan Karssemeijer