Mentor Graphics Corporation

Le Hong

Junjiang Lei

Yuansheng Ma

Emile Y Sahouria

George P Lippincott

Alexander Tritchkov

Georg P Lippincott

YiNing Pan

Mei-Fang Shen

Aspects of the disclosed technology relate to techniques of generating guiding patterns for via-type features. An initial guiding pattern characterized by a plurality of guiding pattern parameters is constructed for two or more via-type features in a layout design based on target values of location and size parameters for the two or more via-type features. Predicted values of the location and size parameters are then extracted from the initial guiding pattern based on simulations or correlation information between the plurality of guiding pattern parameters and the location and size parameters. Based on the predicted values of the location and size parameters, the target values of location and size parameters and the correlation information, a modified guiding pattern is determined by adjusting one or more parameters of the plurality of guiding pattern parameters. The extraction and determination operations may be iterated.

Guiding patterns optimization for directed self-assembly

Aspects of the disclosed technology relate to techniques of optical proximity correction for directed self-assembly guiding patterns. An initial mask pattern for photomask fabrication is first generated by performing a plurality of conventional optical proximity correction iterations. Predicted print errors for two or more via-type features are then determined based on a predicted guiding pattern for the two or more via-type features, a target guiding pattern for the two or more via-type features, and correlation information between a plurality of guiding pattern parameters and location and size parameters for the two or more via-type features. Here the predicted guiding pattern is derived based on the initial mask pattern. Based on the predicted print errors and the correlation information, the initial mask pattern is adjusted to generate a new mask pattern.

Optical proximity correction for directed-self-assembly guiding patterns

Aspects of the invention relate to techniques for applying edge fragment correlation information to optical proximity correction. Neighbor-aware edge adjustment values for the edge fragments are computed based on edge placement error values and edge fragment correlation information. The computation comprises: selecting a group of edge fragments around a center edge fragment, calculating preliminary neighbor-aware edge adjustment values based on the edge placement error values and the edge fragment correlation information for the group of edge fragments, storing the preliminary neighbor-aware edge fragment adjustment value for the center edge fragment, and repeating the selecting, the calculating and the storing with each of the edge fragments being the center edge fragment. The computed neighbor-aware edge adjustment values are combined with conventional edge adjustment values and the edge fragments are adjusted accordingly. The process may be repeated for a number of times.

Neighbor-aware edge fragment adjustment for optical proximity correction

Aspects of the invention relate to techniques for applying edge fragment correlation information to optical proximity correction. Conventional edge adjustment values for the edge fragments are first derived from edge placement error values. Neighbor-aware edge adjustment values for the edge fragments are then computed based on the edge placement error values, the conventional edge adjustment values and edge fragment correlation information. The computation comprises: calculating pseudo edge placement error values by subtracting neighboring edge movement contribution values from the edge placement error values and calculating the neighbor-aware edge adjustment values based on the pseudo edge placement error values. The computed neighbor-aware edge adjustment values are combined with conventional edge adjustment values and the edge fragments are adjusted accordingly. The process may be repeated for a number of times.

Optical proximity correction based on edge fragment correlation

A method for separating features in a target layout into different mask layouts for use in a photolithographic process. Features of a target layer are searched for features having a predefined shape. In one embodiment, portions of the feature having the predefined shape divided into two or more sub-features and at least one sub-feature are not considered when separating the features into two or more mask layouts. In another embodiment, features having a predefined shape are cut to form two or more sub-features and all features and sub-features are considered when separating the features of the target layout into the two or more mask layouts.

IC layout parsing for multiple masks

Aspects of the invention relate to techniques for determining edge fragment correlation information. With various implementations of the invention, image intensity slope information for edge fragments in a layout design is determined. The image intensity slope information comprises information describing how image intensity for each of the edge fragments changes with its position. Image amplitude sensitivity information for the edge fragments is also determined. The image amplitude sensitivity information comprises information describing how image amplitude for each of the edge fragments changes with positions of neighboring edge fragments. Based on the image intensity slope information and the image amplitude sensitivity information, edge fragment correlation information for the edge fragments is determined. Using the edge fragment correlation information, the layout design may be processed by using, for example, OPC techniques. This OPC process may be performed on the whole layout design or problematic layout regions identified by a conventional OPC process.

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West Linn, OR, United States of America

Le Hong