Sharp Laboratories of America, Inc

Sharp Kabushiki Kaisha Corporation

Sharp Microelectronics Technology, Inc.

Other

Advanced Technology Materials, Inc.

Lawrence J Charneski

Tue H Nguyen

Sheng Teng Hsu

David R Evans

Wei-Wei Zhuang

Tingkai Li

Masato Kobayashi

Gautam Bhandari

Yoshihide Senzaki

Fengyan Zhang

Wei Pan

Bruce Dale Ulrich

Lynn R Allen

Tuc Nguyen

A nanorod sensor with a single plane of horizontally-aligned electrodes and an associated fabrication method are provided. The method provides a substrate and forms an intermediate electrode overlying a center region of the substrate. The intermediate electrode is a patterned bottom noble metal/Pt/Ti multilayered stack. TiOnanorods are formed over the substrate and intermediate electrode, and a TiOfilm may be formed overlying the TiOnanorods. The TiOnanorods and TiOfilm are formed in-situ, in the same process, by varying the substrate temperature. In other aspects, the TiOfilm is formed between the nanorods and the intermediate electrode. In yet another aspect, the TiOfilm is formed both above and below the nanorods. A single plane of top electrodes is formed overlying the TiOfilm from a top noble metal/Pt/Ti multilayered stack overlying the TiOfilm, which has been selectively etched to form separate top electrodes.

Nanorod sensor with single-plane electrodes

A multi-layer PrCaMnO(PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO film with bipolar switching properties; and, forming top electrode overlying the PCMO film. If the polycrystalline layers are deposited overlying the nanocrystalline layers, a high resistance can be written with narrow pulse width, negative voltage pulses. The PCMO film can be reset to a low resistance using a narrow pulse width, positive amplitude pulse. Likewise, if the nanocrystalline layers are deposited overlying the polycrystalline layers, a high resistance can be written with narrow pulse width, positive voltage pulses, and reset to a low resistance using a narrow pulse width, negative amplitude pulse.

Bipolar switching PCMO capacitor

System and method for forming a bipolar switching PCMO film

A method of forming PrCaMnOthin films having a PMO/CMO super lattice structure using metalorganic chemical vapor deposition includes preparing organometallic compounds and solvents and mixing organometallic compounds and solvents to form PMO and CMO precursors. The precursors for PMO and CMO are injected into a MOCVD chamber vaporizer. Deposition parameters are selected to form a nano-sized PCMO thin film or a crystalline PCMO thin film from the injection of PMO and CMO precursors, wherein the PMO and CMO precursors are alternately injected into the MOCVD chamber vaporizer. The selected deposition parameters are maintained to deposit the PCMO thin film species having a desired Pr:Ca concentration ratio in a specific portion of the PCMO thin film. The resultant PCMO thin film is annealed at a selected temperature for a selected time period.

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A method of fabricating a PCMO thin film at low temperature for use in a RRAM device includes preparing a PCMO precursor; preparing a substrate; placing the substrate into a MOCVD chamber; introducing the PCMO precursor into the MOCVD chamber to deposit a PCMO thin film on the substrate; maintaining a MOCVD vaporizer at between about 240&#xb0; C. to 280&#xb0; C. and maintaining the MOCVD chamber at a temperature of between about 300&#xb0; C. to 400&#xb0; C.; removing the PCMO thin-film bearing substrate from the MOCVD chamber; and completing the RRAM device.

A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.

Copper metal precursor

A Cu(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C to C alkyl, C to C haloalkyl, C to C phenyl, H and C to C alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.

Substituted phenylethylene precursor synthesis method

A method is provided for promoting adhesion of CVD copper to diffusion barrier material in integrated circuit manufacturing. The method uses a two-step CVD copper metallization process. Following deposition of a diffusion barrier layer on the IC substrate, a first layer of CVD copper is deposited on the barrier material. The first layer is preferably thin (less than 300 &angst;) and deposited using a precursor which yields an adherent conforming layer of copper. The suggested precursor for use in depositing the first layer of CVD copper is (hfac)Cu(1,5-Dimethylcyclooctadiene). The first layer of CVD copper serves as a &ldquo;seed&rdquo; layer to which a subsequently-deposited &ldquo;fill&rdquo; or &ldquo;bulk&rdquo; layer of CVD copper will readily adhere. The second copper deposition step of the two-step process is the deposit of a second layer of copper by means of CVD using another precursor, different from (hfac)Cu(1,5-Dimethylcyclooctadiene). The precursor selected for depositing the second layer of CVD copper is preferably one which has a substantially higher deposition rate, or is otherwise less costly or simpler to use, which will lower production costs since most of the mass of deposited copper is in the second layer. Because the second CVD copper layer is deposited on copper, adhesion to the first-deposited layer will be good because the layers are joined by copper-to-copper bonds. Thus, the two layer process provides optimal economy with good adhesion to barrier material.

Adhesion promotion method for CVD copper metallization in IC applications

Method of depositing a high-adhesive copper thin film on a metal nitride substrate

A system and method of selectively etching copper surfaces free of copper oxides in preparation for the deposition of an interconnecting metallic material is provided The method removes metal oxides with &bgr;-diketones, such as Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively to copper oxides. The by-products of the cleaning process are likewise volatile for removal from the system with a vacuum pressure. Since the process is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in-situ cleaning process permits a minimum amount of copper oxide to reform before the deposition of the overlying interconnection metal. In this manner, a highly conductive electrical interconnection between the copper surface and the interconnecting metal material is formed. An IC having a metal interconnection, in which the underlying copper layer is cleaned of copper oxides, in-situ with Hhfac vapor, is also provided.

Integrated circuit prepared by selectively cleaning copper substrates, in-situ, to remove copper oxides

A method is provided for promoting adhesion of CVD copper to diffusion barrier material in integrated circuit manufacturing. The method includes depositing a first seed layer of copper on the barrier material by chemical vapor deposition (CVD) using (hfac)Cu(1,5-Dimethylcyclooctadiene) precursor. Following the deposition of the seed layer, which strongly adheres and conforms to the copper receiving surfaces on the diffusion barrier, the wafer substrate is positioned in an electro-chemical deposition apparatus, such as an electroplating or electroless plating bath. A second layer of copper is then deposited on the seed layer by means of electrochemical deposition, e.g., electroplating or electroless plating. The second layer of copper deposited by electro-chemical deposition is a &ldquo;fill&rdquo; or &ldquo;bulk&rdquo; layer, substantially thicker than the seed layer. The method provides good adhesion between the copper and barrier material because the seed layer deposited by (hfac)Cu(1,5-Dimethylcyclooctadiene) strongly adheres and conforms to barrier material and the electroplated or electroless plated copper strongly adheres to the copper seed layer.

Adhesion promotion method for electro-chemical copper metallization in IC applications

A method is provided to clean the interior surfaces, and especially the wafer chuck, of a metal vapor deposition chamber. The method takes advantage of the fact that the chamber controls the introduction and removal of chemical atmospheres, and the temperature inside the chamber. The method first oxidizes the surface to be cleaned with an oxygen plasma, and then removes the oxide products as a vapor with the use of Hhfac. The oxidization is controlled through the use of oxygen atmosphere, temperature, and radio frequency power levels. In this manner, the wafer chuck is cleaned of deposition byproducts without disassembly of the chamber.

In-situ method of cleaning a metal-organic chemical vapor deposition chamber

A method of forming a volatile copper precursor for chemical vapor deposition of copper metal thin film includes formation of a volatile liquid having a chemical formula of (n-R-m-cyclohexene)Cu(I)(hfac) or (n-R-m-cyclopentene)Cu(I)(hfac), where n,m&equals;1-6, and where R is a alkyl, such as methyl and ethyl.

Substituted cycloalkene new copper precursors for chemical vapor deposition of copper metal thin films

A system and method of selectively etching copper surfaces free of copper oxides in preparation for the deposition of an interconnecting metallic material is provided. The method removes metal oxides with &bgr;-diketones, such as Hhfac. The Hhfac is delivered into the system in vapor form, and reacts almost exclusively to copper oxides. The by-products of the cleaning process are likewise volatile for removal from the system with a vacuum pressure. Since the process is easily adaptable to most IC process systems, it can be conducted in an oxygen-free environment, without the removal of the IC from the process chamber. The in-situ cleaning process permits a minimum amount of copper oxide to reform before the deposition of the overlying interconnection metal. In this manner, a highly conductive electrical interconnection between the copper surface and the interconnecting metal material is formed. An IC having a metal interconnection, in which the underlying copper layer is cleaned of copper oxides, in-situ with Hhfac vapor, is also provided.

Growing community of inventors

Vancouver, WA, United States of America

Lawrence J Charneski