Dupont Photomasks, Inc.

E.i. Dupont De Nemours and Company

Advanced Micro Devices Corporation

Hoya Corporation

Toppan Photomasks, Inc.

Laurent Dieu

Osamu Nozawa

Peter Francis Carcia

Hideaki Mitsui

Bruno M La Fontaine

Franklin Dean Kalk

A reflective mask (e.g., an EUV reflective mask) and a method of making such a mask are disclosed. The mask includes an absorbent substrate and a reflective coating overlying the substrate. The reflective coating is patterned to include a circuit design that is to be transferred onto one or more wafers, and more particularly onto one or more die on the wafers, during semiconductor fabrication processing. The mask includes no other radiation absorbent material, and the occurrence and severity of dead zones, which commonly occur in conventional reflective masks and which degrade the fidelity of pattern transfers, are thereby mitigated. A methodology for inspecting the mask via the transmission of visible, UV or deep-UV radiation through the mask is also disclosed.

Reflective mask for short wavelength lithography

A photomask and method for manufacturing the same are disclosed. A first material is deposited on at least a portion of a substrate to form a first material layer. Before completion of the deposition of the first material, a thermal treatment is applied to the substrate at a temperature greater than approximately 300 degrees Celsius.

Photomask and method for manufacturing the same

A method for producing a halftone phase shift mask blank having a semi-transmission film on a transparent substrate includes alternately laminating, on a transparent substrate, thin layers substantially made of nitrogen and titanium and thin layers substantially made of nitrogen and silicon to thereby form thereon a multi-layered semi-transmission film, followed by heating the semi-transmission film at 300&#xb0; C. or higher.

Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask

An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MO C N compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in a single layer or a multiple layer configuration.

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Austin, TX, United States of America

Laurent Dieu