Fujitsu Corporation

Laurence H Cooke

John J Zasio

Fred K Buelow

An electron beam exposure system and method for use in the process of fabricating microminiature devices at high speeds. The high-speed operation is achieved with a computer providing programmed commands specifying a particular pattern to be scanned. A processor, responsive to programmed data, generates scan data a line at a time and loads a line generator. The line generator steps to each exposure location in a line to provide control signals for controlling the position of the electron beam. The starting and end positions of scan lines in both the X and Y directions may be arbitrarily selected thereby eliminating the need for scanning areas not intended to be processed.

Electron beam exposure system method and apparatus

An electron beam exposure apparatus and method for use in fabricating semiconductor devices. A chip pattern larger in area than the electron beam scan field is divided into and exposed in a number of smaller parts (called partitions). The work piece on which the chip pattern is to be formed is moved relative to the scan field to enable each partition to be individually scanned at a different work piece position. The scan field, with the work piece positioned to scan one partition, overlaps onto and establishes a boundary region on an adjacent partition. Portions of chip patterns which lie in a boundary region are selectively scanned in connection with one or another of the abutting partitions. Portions of chip patterns falling in the boundary regions are selected for scanning in one or the other of adjacent partitions so as to minimize the number of divisions and so as to avoid dividing the pattern along critical dimensions.

Growing community of inventors

Cupertino, CA, United States of America

Laurence H Cooke