Air Products and Chemicals, Inc.

Intermolecular, Inc.

Versum Materials Us, LLC

Laura M Matz

Raymond Nicholas Vrtis

Mark Leonard O'Neill

Xinjian Lei

Moo-Sung Kim

Mary Kathryn Haas

Iain Buchanan

Sunil Shanker

Xiangxin Rui

Sergei Vladimirovich Ivanov

Daniel P Spence

Manchao Xiao

Scott Jeffrey Weigel

Tianniu Chen

Xiaobo Shi

John Anthony Thomas Norman

Wen Dar Liu

Yi-Chia Lee

Andrew David Johnson

Aiping Wu

Anupama Mallikarjunan

Gene Everad Parris

John Giles Langan

Dino Sinatore

Ming-Shih Tsai

Agnes Derecskei-Kovacs

Glenn Michael Mitchell

Agnes Derecskei

Blake J Lew

Rung-Je Yang

Chris Keh-Yeuan Li

Pao-Chia Pan

Ling-Jen Meng

Ryback Li Chang Lo

Hsiu Mei Chen

Randy Li-Kai Chang

Chad Chang-Tse Hsieh

Mark Leonard O'neill

Pao Chia Pan

Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 &#x3bc;m, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith.

Photoresist cleaning composition used in photolithography and a method for treating substrate therewith

A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.

Low K precursors providing superior integration attributes

A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of;

Dielectric barrier deposition using nitrogen containing precursor

Low k precursors providing superior integration attributes

A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower dielectric constant and superior electrical properties. This method will be important for barrier layers used in a damascene or dual damascene integration for interconnect structures or in other dielectric barrier applications. In this example, specific structural properties are noted that improve the barrier performance.

Dielectric barrier deposition using oxygen containing precursor

Embodiments of the current invention include methods of forming a strontium titanate (SrTiO) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiOand SrO unit films is less than approximately 5 angstroms. The TiOand SrO units films are then annealed to form a strontium titanate layer.

Methods of forming strontium titanate films

A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of &#x3b2;-diketonates, &#x3b2;-ketoiminates, &#x3b2;-ketoesterates, &#x3b2;-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of RRNRORNRR, RORNRR, O(CHCH)NR, RRNRN(CHCH)O, RRNRORN(CHCH)O, O(CHCH)NRORN(CHCH)O, and mixtures thereof, wherein Rare independently selected from group consisting of Clinear alkyl, Cbranched alkyl, Ccyclic alkyl, C-Caromatic, Calkylamine, Calkylaminoalkyl, Cether, C-Ccyclic ether, C-Ccyclic aminoether, and mixture thereof.

Liquid composition containing aminoether for deposition of metal-containing films

Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and Rare each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; Ris an alkyl group comprising from 1 to 10 carbon atoms; Ris chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; Ris an alkyl group comprising from 1 to 6 carbon atoms and wherein Rand Rare different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.

Precursors for depositing group 4 metal-containing films

A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

Process for restoring dielectric properties

The present invention relates to the improved adhesion between a patterned conductive metal layer, usually a copper layer, and a patterned barrier dielectric layer. The structure with the improved adhesion comprises an adhesion layer between a patterned barrier dielectric layer and a patterned conductive metal layer. The adhesion layer improves adhesion between the metal layer and the barrier layer without increasing the copper bulk electrical resistance. The method of making the structure with the improved adhesion comprises steps of thermal expositing the patterned conductive metal layer to an organometallic precursor to deposit an adhesion layer at least on the top of the patterned conductive metal layer.

Adhesion to copper and copper electromigration resistance

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Allentown, PA, United States of America

Laura M Matz