Accelerators, Inc.

Veeco/ai, Inc.

Larry L Keutzer

F Donald Orr, Jr

Roger B Gault

Larry F Templeton

L F Templeton

A control system is disclosed for an ion implantation system of the type in which the wafers to be implanted are mounted around the periphery of a disk which rotates and also moves in a radial direction relative to an ion beam to expose successive sections of each wafer to the radiation. The control system senses beam current which passes through one or more apertures in the disk and is collected by a Faraday cup. This current is integrated to obtain a measure of charge which is compared with a calculated value based upon the desired ion dosage and other parameters. The resultant controls the number of incremental steps the rotating disk moves radially to expose the adjacent sections of each wafer. This process is continued usually with two or more traverses until the entire surface of each wafer has been implanted with the proper ion dosage.

Ion implantation control system

The invention provides a method and apparatus for generating large quantities of singlet oxygen and/or ozone at unexpectedly high efficiencies. An electron beam generated by a hollow cathode plasma discharge device (HCD) is spread by disclosed means over an electron-transmissive window past which is flowing an oxygen-containing atmosphere at a high velocity.

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Austin, TX, United States of America

Larry L Keutzer