Applied Materials, Inc.

Larry A Dworkin

Li-Qun Xia

Mehul B Naik

Ping Xu

A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.

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Sunnyvale, CA, United States of America

Larry A Dworkin