Stats Chippac Pte. Ltd.

Stat Chippac Ltd.

KyuWon Lee

JinGwan Kim

JiHoon Oh

DaeSik Choi

SungWon Cho

SinJae Lee

SunYoung Chun

HyunSu Shin

JongVin Park

JaeHyun Lim

Hun Jeong

Jaehyun Lim

OhHan Kim

Taewoo Lee

DongSoo Moo

Hermes T Apale

TaeWoo Lee

Mark Sackett

MoonKi Jeong

A semiconductor device has a substrate and plurality of first bumps formed over the substrate in an array. An array of second bumps is formed over the substrate on at least two sides of the first bumps. An electrical component is disposed over the first bumps. A package structure is disposed over the substrate and electrical component. The package structure has a horizontal member and legs extending from the horizontal member to form a cavity. The package structure is coupled to the array of second bumps. The package structure includes a material to operate as a heat sink or shielding layer. The shielding layer makes ground connection through the array of second bumps. The first bumps and second bumps have a similar height and width to form in the same manufacturing step. A protective layer, such as conductive epoxy, is disposed over the array of second bumps.

Semiconductor device and method of forming bump pad array on substrate for ground connection for heat sink/shielding structure

A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding layer is mounted over the first semiconductor die. The shielding layer is secured to the first semiconductor die with the adhesive layer and grounded through the first TSV and interconnect structure to block electromagnetic interference. A second semiconductor die is mounted to the shielding layer and electrically connected to the interconnect structure. A second TSV is formed through the second semiconductor die. An encapsulant is deposited over the shielding layer, second semiconductor die, and interconnect structure. A slot is formed through the shielding layer for the encapsulant to flow into the cavity and cover the first semiconductor die.

Semiconductor device and method of forming a shielding layer over a semiconductor die disposed in a cavity of an interconnect structure and grounded through the die TSV

A method of manufacture of an integrated circuit packaging system includes: providing a semiconductor wafer having a chip pad; attaching a wafer frame to the semiconductor wafer, the wafer frame having a horizontal cover integral to a protruding connector with the protruding connector on the chip pad; forming an underfill around the protruding connector and between the horizontal cover and the semiconductor wafer; removing the horizontal cover exposing the underfill and the protruding connector; and singulating an integrated circuit package from the semiconductor wafer.

Integrated circuit packaging system with posts and method of manufacture thereof

A semiconductor device has a substrate with a die attach area. A conductive layer is formed over a surface of the substrate and extending below the surface. An insulating layer is formed over the surface of the substrate outside the die attach area. A portion of the conductive layer is removed within the die attach area to expose sidewalls of the substrate. The remaining portion of the conductive layer is recessed below the surface of the substrate within the die attach area. A semiconductor die has bumps formed over its active surface. The semiconductor die is mounted to the substrate by bonding the bumps to the remaining portion of the first conductive layer recessed below the first surface of the substrate. The sidewalls of the substrate retain the bumps during bonding to the remaining portion of the conductive layer. An encapsulant is deposited between the semiconductor die and substrate.

Semiconductor device and method of forming partially-etched conductive layer recessed within substrate for bonding to semiconductor die

A semiconductor device has a flipchip type semiconductor die with contact pads and substrate with contact pads. A flux material is deposited over the contact pads of the semiconductor die and contact pads of the substrate. A solder tape formed as a continuous body of solder material with a plurality of recesses is disposed between the contact pads of the semiconductor die and substrate. The solder tape is brought to a liquidus state to separate a portion of the solder tape outside a footprint of the contact pads of the semiconductor die and substrate under surface tension and coalesce the solder material as an electrical interconnect substantially within the footprint of the contact pads of the semiconductor die and substrate. The contact pads on the semiconductor die and substrate can be formed with an extension or recess to increase surface area of the contact pads.

Semiconductor device and method of forming electrical interconnection between semiconductor die and substrate with continuous body of solder tape

A semiconductor device can include a carrier substrate, and a first semiconductor die disposed on a surface of the carrier substrate. An encapsulant can be disposed over the first semiconductor die and the carrier substrate. The semiconductor device can include first vias disposed through the encapsulant as well as second vias disposed through the encapsulant to expose first contact pads. The first contact pads are on upper surfaces of the first semiconductor die. The semiconductor device can include conductive pillars that fill the first vias, and first conductive metal vias (CMVs) that fill the second vias. The conductive pillar can include a first conductive material, and the first CMVs can be in contact with the first contact pads. The semiconductor device can include a conductive layer disposed over the encapsulant. The conductive layer can electrically connect one of the first CMVs with one of the conductive pillars.

Semiconductor device and method of forming WLCSP structure using protruded MLP

A method of manufacture of an integrated circuit packaging system includes: forming an outer contact pad having an outer pad top side; mounting an integrated circuit above the outer pad top side; forming an encapsulation having an encapsulation top side and an encapsulation bottom side, the encapsulation over the integrated circuit with the encapsulation bottom side coplanar with the outer pad top side; and forming a vertical interconnect through the encapsulation, the vertical interconnect having an interconnect bottom side directly on the outer pad top side and an interconnect top side exposed from the encapsulation.

Integrated circuit packaging system with vertical interconnection and method of manufacture thereof

Semiconductor device with partially-etched conductive layer recessed within substrate for bonding to semiconductor die

A method of manufacture of an integrated circuit packaging system includes: providing a base substrate having a base substrate top side; mounting a base integrated circuit over the base substrate top side, the base integrated circuit having an active side opposite an inactive side with the inactive side facing the base substrate top side; attaching a peripheral interconnect to the base substrate top side and a device peripheral pad of the base integrated circuit at the active side; mounting an interposer over the base integrated circuit and the peripheral interconnect, the interposer having an interposer top side and a window; and attaching a central interconnect to the interposer top side and a device central pad of the base integrated circuit at the active side, the central interconnect through the window.

Integrated circuit packaging system with package-on-package and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing a package carrier; mounting an integrated circuit device to the package carrier; mounting an embeddable conductive structure, having a non-horizontal portion between a lower portion and an elevated portion and a hole, to the integrated circuit device with the lower portion over the integrated circuit device; mounting an interposer to the lower portion and below the elevated portion; and forming an encapsulation having a recess exposing the interposer and the elevated portion.

Integrated circuit packaging system with embedded conductive structure and method of manufacture thereof

Method of forming partially-etched conductive layer recessed within substrate for bonding to semiconductor die

An integrated circuit package stacking system includes: forming a flexible substrate by: providing an insulating material, forming a stacking pad on the insulating material, forming a coupling pad on the insulating material, and forming a trace between the stacking pad and the coupling pad; providing a package substrate; coupling an integrated circuit to the package substrate; and applying a conductive adhesive on the package substrate for positioning the flexible substrate over the integrated circuit and coupling the flexible substrate on the conductive adhesive.

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Kyoungki-do, South Korea

KyuWon Lee