Samsung Electronics Co., Ltd.

Kyuman Hwang

Jinwoo Kim

Jae Hyun Park

Daewon Ha

Juyoun Kim

Sungil Park

Provided is a three-dimensional semiconductor device and its fabrication method. The semiconductor device includes a first active region on a substrate and including a plurality of lower channel patterns and a plurality of lower source/drain patterns that are alternately arranged along a first direction, a second active region on the first active region and including a plurality of upper channel patterns and a plurality of upper source/drain patterns that are alternately arranged along the first direction, a first gate electrode on a first lower channel pattern of the lower channel patterns and on a first upper channel pattern of the upper channel patterns, and a second gate electrode on a second lower channel pattern of the lower channel patterns and on a second upper channel pattern of the upper channel patterns. The second gate electrode may include lower and upper gate electrodes with an isolation pattern interposed therebetween.

Three-dimensional semiconductor device and method of fabricating the same

A semiconductor device includes first and second active regions on a substrate, an element isolation layer between the first and second active regions, a dummy gate line, dummy gate spacers at opposite side walls of the dummy gate line, and a dummy gate capping layer on the dummy gate line and. An upper surface of the element isolation layer is proximate to an upper surface of the substrate in relation to an upper end of the first active region in a vertical direction. The dummy gate line includes a horizontal section extending on the first active region to the element isolation layer in a horizontal direction, and a vertical section extending downwards from the horizontal section along a side wall of the first active region, the dummy gate line having an L shape, a vertical thickness of the horizontal section being smaller than a vertical thickness of the vertical section.

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Seoul, South Korea

Kyuman Hwang