Jsr Corporation

Kyoyu Yasuda

Satoru Murakami

Yushi Matsumura

Kazuhiko Komura

Shinya Nakafuji

Shin-ya Minegishi

Shinya Minegishi

Makoto Sugiura

Takanori Nakano

Takashi Mori

Yoshio Takimoto

Yusuke Anno

Masato Tanaka

Koichi Hasegawa

Toru Kimura

Hayato Namai

Kazunori Takanashi

Shin-ya Nakafuji

Satoshi Dei

Tomoharu Kawazu

Kazuhiko Koumura

A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180&#xb0; C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

Pattern-forming method and resist underlayer film-forming composition

A silicon-containing film-forming composition includes a polysiloxane and organic solvent. The polysiloxane includes a first structural unit, a second structural unit, and a third structural unit. The first structural unit is derived from a tetraalkoxysilane. The second structural unit is derived from a compound shown by a formula (1), wherein Rrepresents a hydrogen atom or an electron-donating group, at least one Ris an electron-donating group, Rrepresents a monovalent organic group, and n represents 0 or 1. The third structural unit is derived from a compound shown by a formula (2), wherein Rrepresents an alkyl group having 1 to 8 carbon atoms, and Rrepresents a monovalent organic group.

Silicon-containing film-forming composition, silicon-containing film, and pattern forming method

An insulation pattern-forming method includes forming an organic pattern on a substrate. A space defined by the organic pattern is filled with an insulating material. The organic pattern is removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. An insulation pattern-forming method includes forming a first organic pattern on the substrate. A space defined by the first organic pattern is filled with an insulating material. An upper surface of the first organic pattern is exposed. A second organic pattern that comes in contact with the upper surface of the first organic pattern is formed. A space defined by the second organic pattern is filled with the insulating material. The first organic pattern and the second organic pattern are removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured.

Insulation pattern-forming method and insulation pattern-forming material

Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

Pattern-forming method, and composition for forming resist underlayer film

A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of Rto Rindependently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of Rto Rrepresents the group shown by the formula (2). 

Resist underlayer film-forming composition and method for forming pattern

A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Pattern-forming method, resist underlayer film, and composition for forming resist underlayer film

A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of Rto Rindividually represent a group shown by the following formula (2) or the like. Rrepresents a single bond or the like. Rrepresents a hydrogen atom or the like. 

Resist underlayer film-forming composition

A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein Rto Rindividually represent a group shown by the following formula (2) or the like,&#x2014;O&#x2014;R&#x2261;R&#x2003;&#x2003;(2)wherein Rrepresents a single bond or the like, and Rrepresents a hydrogen atom or the like.

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Tokyo, Japan

Kyoyu Yasuda