Tokyo Electron Limited

Tokyo Electron Limi Ted

Kyoko Ikeda

Hayashi Otsuki

Tsukasa Matsuda

Kazuya Dobashi

Kenji Sekiguchi

Shuji Moriya

Tsunenaga Nakashima

Shuuichi Nishikido

Yukimasa Saito

Toshiki Hinata

Masato Nakajo

Takahiro Yasutake

Daisuke Toriya

Tatsuro Ohshita

Ikuo Sawada

Einosuke Tsuda

Koyu Hasegawa

Motoshi Fukudome

Sumie Nagaseki

Satoshi Takeda

Satoshi Yonekura

A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Substrate cleaning method, processing container cleaning method, and substrate processing device

A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

Substrate cleaning apparatus

A cleaning method that removes contaminants adhering to a stage in a chamber, includes: setting a pressure in a chamber to a predetermined vacuum pressure; supplying a first gas that forms a shock wave toward the stage; and supplying a second gas that does not form the shock wave toward the stage.

Cleaning method and substrate processing apparatus

A substrate processing device includes a processing container; a substrate holder configured to hold a substrate arranged within the processing container; a gas nozzle configured to spray gas within the processing container; a controller configured to control collision of the gas with the substrate held by the substrate holder. The controller is configured to remove particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.

Substrate stage and substrate processing apparatus

A gas supply member includes a straight flow path having a straight-line shape and a first end to be supplied with a gas, a gas discharge port branched from the straight flow path and a gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the gas supplied to the straight flow path.

Gas supply member and gas processing apparatus

According to the present invention, a substrate processing apparatus has a chamber (), a stage () for holding a substrate (W) to be processed in the chamber (), and a nozzle part () from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber () is performed by: placing a prescribed reflecting member (dW,) in the chamber (), blasting a gas cluster (C) onto the reflecting member (dW,), and applying the gas-cluster flow reflected by the reflecting member (dW,) onto a wall section of the chamber () to remove particles (P) adhered to the wall section of the chamber ().

Method for cleaning chamber of substrate processing apparatus

A substrate transfer system includes a substrate transfer part capable of transferring a substrate while holding the substrate, an elevating mechanism including a support axis extending in an upper-lower direction and being capable of moving the substrate transfer part along the support axis within a predetermined range, a first exhaust port located at a position selected from at least one of on the supporting axis and near the supporting axis above an upper limit of the predetermined range, a second exhaust port located at a position selected from at least one of on the supporting axis and near the supporting axis below a lower limit of the predetermined range, and an exhaust part connected such that exhaust is available through the first exhaust port and the second exhaust port.

Substrate transfer system and heat treatment apparatus using same

A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the liquid material with high efficiency to suppress generation of particles. With the vaporizing unit, positively or negatively charged bubbles, which have a diameter of 1000 nm or less, are produced in the liquid material, and the liquid material is atomized to form a mist of the liquid material. Further, the mist of the liquid material is heated and vaporized. The fine bubbles are uniformly dispersed in advance in the liquid material, so that very fine and uniform mist particles of the liquid material are produced when the liquid material is atomized, which makes heat exchange readily conducted. By vaporizing the mist of the liquid material, vaporization efficiency is enhanced, and generation of particles can be suppressed.

Vaporizing unit, film forming apparatus, film forming method, computer program and storage medium

The present invention provides a particle measuring system which is provided in a processing systemwhich generates an atmosphere obtained by exhausting air or a gas in a processing chamberby a vacuum pumpand applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipewhich connects an exhaust openingof the processing chamberwith the vacuum pump, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

Particle-measuring system and particle-measuring method

Film forming method

Film formation processing apparatus and method for determining an end-point of a cleaning process

The present invention provides a particle measuring system which is provided in a processing system that generates an atmosphere obtained by exhausting air or a gas in a processing chamber by a vacuum pump and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe which connects an exhaust opening of the processing chamber with the vacuum pump, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

The present invention provides a particle measuring system which is provided in a processing systemwhich generates an atmosphere obtained by exhausting air or a gas in a processing chamberby a vacuum pumpand applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipewhich connects an exhaust openingof the processing chamberwith the vacuum pumpand measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

Growing community of inventors

Kofu, Japan

Kyoko Ikeda