Tokyo Electron Limited

Kyo Tsuboi

Takashi Fuse

Koji Takeya

Tadashi Kotsugi

Yasuharu Sasaki

Mitsuaki Komino

Shoichiro Matsuyama

Hideaki Amano

Shuhei Yamabe

Yusuke Hayasaka

Naoki Tamaru

Iku Shiota

Keisuke Yoshimura

Tomoya Kato

A plasma processing apparatus is for performing plasma processing in a depressurizable inner space. The apparatus includes a chamber having therein an inner space, a supporting table provided in the inner space and configured to support a substrate to be mounted thereon, one or more first members included in the chamber or separate from the chamber and partially exposed to a depressurized environment including the inner space, and one or more second members included in the chamber or separate from the chamber, each being in contact with a corresponding one of said one or more first members, and partially disposed in an atmospheric pressure environment. The apparatus further includes one or more feeders each of which is configured to supply a coolant to a cavity formed in a corresponding one of said one or more second members.

Plasma processing apparatus

Provided is a mounting stage on which a substrate to be subjected to a plasma process is mounted. The mounting stage includes: an electrostatic chuck configured to attract the substrate and an edge ring disposed around the substrate; and supply holes through which a heat medium is supplied to a space between the electrostatic chuck and the edge ring. A groove is provided in at least one of the edge ring and the mounting stage, and the groove is not in communication with the supply holes.

Mounting stage, substrate processing device, and edge ring

A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method, and method of manufacturing substrate

Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate

An electrode structure used in a plasma processing apparatus which performs a predetermined process on an object (W) to be processed by using a plasma in a process chamber () in which a vacuum can be formed. An electrode unit () has a heater unit () therein. A cooling block () having a cooling jacket () is joined to the electrode unit () so as to cool the electrode unit. A heat resistant metal seal member (A,B) seals an electrode-side heat transfer space () formed between the electrode unit and the cooling block. Electrode-side heat transfer gas supply means () supplies a heat transfer gas to the electrode-side heat transfer space. Accordingly, a sealing characteristic of the electrode-side heat transfer space does not deteriorate even in a high temperature range such as a temperature higher than 200&#xb0; C. and, for example, a range from 350&#xb0; C. to 500&#xb0; C., and the heat transfer gas does not leak.

Plasma processing apparatus, and electrode structure and table structure of processing apparatus

After the release of the application of an attraction voltage to an electrostatic chuck that is attracting a semiconductor wafer, the wafer is pushed upward by lifting pins through only a very small projection distance. Immediately after processing has ended, the temperature of the wafer is several tens of degrees higher than that of the electrostatic chuck so that, if the wafer has detached, the temperature of the rear surface thereof will fall toward the original temperature of the electrostatic chuck. If the wafer has not detached, the temperature thereof will not fall. Therefore, a determination is made as to whether the wafer has detached or whether it is being subjected to residual attraction, based on temperature change data obtained for the wafer in combination with the electrostatic chuck, by a temperature sensor after the wafer has been pushed upward by a very small projection distance. If there is residual attraction, wafer transfer is halted. This makes it possible to prevent damage to the wafer that would occur if an unreasonable force is applied to the wafer by the residual attraction when the wafer is being detached from the electrostatic chuck.

Method of detaching object to be processed from electrostatic chuck

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Tokyo, Japan

Kyo Tsuboi