Toshiba Memory Corporation

Kioxia Corporation

Kyo Otsubo

Hideaki Sakurai

Minako Inukai

Tetsuo Takemoto

Kosuke Takai

Mana Tanabe

Masato Naka

Kenji Masui

According to one embodiment, a method including supplying a liquid onto a substrate, solidifying the liquid on the substrate to form a solidified body, and melting the solidified body of the liquid on the substrate is provided. When solidifying the liquid, an internal pressure of the liquid on the substrate is varied.

Method for cleaning substrate and cleaning device

According to one embodiment, a method for cleaning a substrate includes first cleaning process and second cleaning process. The first cleaning process subjects a substrate to a first cleaning method. The second cleaning process subjects the substrate to a second cleaning method that is different from the first cleaning method and is subsequent to the first cleaning process. The first cleaning method includes at least one of acidic cleaning or alkaline cleaning. The second cleaning method includes freeze cleaning.

Method for cleaning substrate and substrate processing apparatus

According to one embodiment, a first liquid is supplied on a first face of a substrate. The first liquid has a pH with which a surface zeta potential of the substrate becomes negative and a surface zeta potential of a foreign substance attaching to the first face becomes positive. Then, a solidified layer in which at least part of the first liquid has been solidified is formed by cooling the substrate down to be equal to or lower than a solidification point of the first liquid. Thereafter, the solidified layer is melted.

Substrate processing method, substrate processing apparatus, and composite processing apparatus

A freeze cleaning apparatus includes a table for supporting a processing target substrate having a first surface and a second surface opposite to the first surface, a liquid supply unit positioned to supply a cleaning liquid onto the second surface of the processing target substrate that is placed such that the first surface faces the table, and a cooling gas discharge unit in the table to supply a cooling gas to the first surface side of the processing target substrate. A gap between the table and the processing target substrate is set such that the cooling gas flows as a laminar flow between the table and the processing target substrate.

Freeze cleaning apparatus

A substrate cleaning method includes: steps (a) to (d). In step (a), a liquid is supplied onto a nanoimprint template substrate that has a patterned surface with foreign particles to form a liquid film on the patterned surface. In step (b), the liquid film is solidified to form a solidified film including the foreign particles. In step (c), the substrate is reversed. In step (d), the solidified film is melted to remove the foreign particles.

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Shinagawa Tokyo, Japan

Kyo Otsubo