University of California

Xactix, Inc.

Spts Technologies Limited

Verimetra, Inc.

Kyle S Lebouitz

Albert P Pisano

David L Springer

Michele Migliuolo

Roger T Howe

John J Neumann, Jr

Neil H Talbot

John Evans

Edward F Hinds

According to the invention there is provided a method of dry gas phase chemically etching a structure comprising the steps of: positioning the structure in an etch chamber, the structure comprising a first material and a second material, wherein the first material is selected from silicon, molybdenum, germanium, SiGe and tungsten, the second material is silicon dioxide or silicon nitride, and at least one surface of the first material is exposed so as to be contactable by a gas phase chemical etchant; etching the first material with a noble gas fluoride or halogen fluoride gas phase chemical etchant; and exposing the etch chamber to water vapour so that the step of etching the first material is performed in the presence of water vapour.

Method and apparatus for dry gas phase chemically etching a structure

In an apparatus for etching a semiconductor wafer or sample (), the semiconductor wafer or sample is placed on a sample holder () disposed in a first chamber (). The combination of the semiconductor wafer or sample and the sample holder is enclosed within a second chamber () inside the first chamber. Gas is evacuated from the second chamber and an etching gas is introduced into the second chamber, but not into the first chamber, to etch the semiconductor wafer or sample.

Etching chamber with subchamber

In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched.

Selective etching of semiconductor substrate(s) that preserves underlying dielectric layers

In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamberfrom which the atmosphere inside is evacuated. Etching gas is input into the main chamberfor a first period of time. Thereafter, the etching gas is evacuated from the main chamberand cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber. Desirably, the steps of inputting the etching gas into the main chamberfor the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamberfor the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.

Pulsed etching cooling

In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.

Pulsed-continuous etching

In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber () from which the atmosphere inside is evacuated. Etching gas is input into the main chamber () for a first period of time. Thereafter, the etching gas is evacuated from the main chamber () and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber (). Desirably, the steps of inputting the etching gas into the main chamber () for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber () for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.

A cutting instrument including a metal blade has a recess formed therein and a semiconductor substrate affixed to the blade in the recess. The semiconductor substrate includes at least one sensor formed thereon. The sensor formed on the semiconductor substrate may comprise at least one or an array of a strain sensors, pressure sensors, nerve sensors, temperature sensors, density sensors, accelerometers, and gyroscopes. The cutting instrument may also further include a handle wherein the blade is affixed to the handle and the semiconductor substrate is electrically coupled to the handle. The handle may then be coupled, either physically or by wireless transmission, to a computer that is adapted to display information to a person using the cutting instrument based on signals generated by one or more of the sensors formed on the semiconductor substrate. The computer or handle may also be adapted to store data based on the signals generated by one or more of the sensors. A method of making said cutting instrument includes the steps of at least one sensor being formed on a semiconductor wafer and a layer of photoresist being applied on a top side of the semiconductor wafer according to a pattern that matches the defined shape of the semiconductor substrate. The portion of the semiconductor wafer not covered by the photoresist is removed and thereafter the photoresist is removed from the semiconductor wafer, thereby leaving the semiconductor substrate having a defined shape and at least one sensor formed thereon. The semiconductor substrate having a defined shape and at least one sensor formed thereon is then affixed to a metal blade in a recess formed in said blade.

Method of making a cutting instrument having integrated sensors

An etching apparatus for etching semi combustion samples may include one or more variable volume expansion chambers, two or more fixed volume expansion chambers, or combinations thereof in fluid communication with an etching chamber and a source of etching gas, such as xenon difluoride. The apparatus may further include a source of a mixing gas. An etching apparatus may also include a source of etching gas, an etching chamber in fluid communication with the source of etching gas, a flow controller connected between the source of etching gas and the etching chamber, and a vacuum pump in fluid communication with the etching chamber. A source for providing a gas by sublimation from a solid material is also provided, including a vacuum tight container and a mesh mounted in the interior of the vacuum tight container, wherein the mesh is adapted to receive and restrain the solid material.

Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto

This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.

Thermal isolation using vertical structures

A method of forming an injection molded epidermal abrasion device includes depositing mold material on an epidermal abrasion device. The epidermal abrasion device is separated from the mold material to yield a mold. An epidermal abrasion device is then formed within the mold. The epidermal abrasion device may include a matrix of isotropically etched structures having isotropically etched sidewalls positioned between wide bases and narrow tips, each isotropically etched structure having a vertical height of at least 20 &mgr;m. The matrix of isotropically etched structures may define a matrix of pyramids.

Method of fabricating epidermal abrasion device

A cutting instrument including a metal blade has a recess formed therein and a semiconductor substrate affixed to the blade in the recess. The semiconductor substrate includes at least one sensor formed thereon. The sensor formed on the semiconductor substrate may comprise at least one or an array of a strain sensors, pressure sensors, nerve sensors, temperature sensors, density sensors, accelerometers, and gyroscopes. The cutting instrument may also further include a handle wherein the blade is affixed to the handle and the semiconductor substrate is electrically coupled to the handle. The handle may then be coupled, either physically or by wireless transmission, to a computer that is adapted to display information to a person using the cutting instrument based on signals generated by one or more of the sensors formed on the semiconductor substrate. The computer or handle may also be adapted to store data based on the signals generated by one or more of the sensors. A method of making said cutting instrument includes the steps of at least one sensor being formed on a semiconductor wafer and a layer of photoresist being applied on a top side of the semiconductor wafer according to a pattern that matches the defined shape of the semiconductor substrate. The portion of the semiconductor wafer not covered by the photoresist is removed and thereafter the photoresist is removed from the semiconductor wafer, thereby leaving the semiconductor substrate having a defined shape and at least one sensor formed thereon. The semiconductor substrate having a defined shape and at least one sensor formed thereon is then affixed to a metal blade in a recess formed in the blade.

Cutting instrument having integrated sensors

A method of fabricating a microfabricated filter. The method includes forming a frame structure and forming a plurality of openings through the frame structure. A permeable polysilicon membrane is formed over the plurality of openings through the frame structure. At least part of the sacrificial structure is etched with an etchant wherein the etchant passes through the permeable polysilicon membrane. The permeable polycrystal silicon membrane may have a thickness of between about 0.05 micrometers and about 0.30 micrometers.

Microfabricated filter and shell constructed with a permeable membrane

A probe includes an elongated body with a top surface, a bottom surface, a first side wall between the top surface and the bottom surface, and a second side wall between the top surface and the bottom surface. An end is defined by the bottom surface converging into a tip, an isotropically etched portion of the first side wall converging into the tip, and an isotropically etched portion of the second side wall converging into the tip. The elongated body is less than approximately 700 &mgr;m wide and less than approximately 200 &mgr;m thick. The elongated body may incorporate a fluid channel. The elongated body may be formed of silicon that is not doped with Boron. In such a configuration, integrated circuitry or a micromachined device, such as a heater or pump may also be formed on the device. A number of novel processing techniques are associate with the fabrication of the device. The device may be formed by relying solely on isotropic etching. Alternately, a combination of isotropic and anisotropic etching may be used. Unlike prior art micromachined devices, the disclosed device may be processed at relatively low temperatures below 1100&deg; C. and without using the carcinogen ethylenediamin pyrocatechol.

Epidermal abrasion device with isotropically etched tips, and method of fabricating such a device

A microfabricated valve includes a substrate with a fluid path. A main cantilever is positionable in a resting closed state to prevent fluid movement through the fluid path and a resting open state that allows fluid movement through the fluid path. A ratchet cantilever supports the main cantilever in either the resting closed state or the resting open state, such that the main cantilever does not have to be energized to maintain the resting closed state or the resting open state. A valve state transition mechanism selectively energizes the main cantilever or the ratchet cantilever during a valve state transition period to selectively transition between the resting open and closed states.

Growing community of inventors

Pittsburgh, PA, United States of America

Kyle S Lebouitz