Intel Corporation

Kyle Jordan Arrington

Aaron McCann

Shankar Devasenathipathy

Zhimin Wan

Nicholas Neal

Je-Young Chang

Sergio Antonio Chan Arguedas

Aravindha Antoniswamy

Weston Bertrand

Ravindranath Vithal Mahajan

Pooya Tadayon

Kelly P Lofgreen

Elah Bozorg-Grayeli

Joseph B Petrini

Jerrod Peterson

Karumbu Meyyappan

David M Craig

Robert L Sankman

Kristof Darmawikarta

Michael T Crocker

James Chris Matayabas, Jr

Jeremy D Ecton

Gang Duan

James Christopher Matayabas, Jr

James D Williams

Edvin Cetegen

Pramod Malatkar

Dong-Ho Han

Dingying David Xu

Jaejin Lee

Nicholas S Haehn

Kuang C Liu

Xiaoying Guo

Bai Nie

Jung Kyu Han

Hongxia Feng

Taylor W Gaines

Srinivas Venkata Ramanuja Pietambaram

Ken P Hackenberg

Raanan Sover

Haobo Chen

Mostafa A Aghazadeh

Bradley H Smith

Frederick W Atadana

Bohan Shan

Alexey Chinkov

Minseok Ha

Yue Deng

Wei Wei

Santosh Tripathi

Nir Peled

Jason Armstrong

Meir Cohen

Jesus Gerardo Reyes Schuldes

Various embodiments disclosed relate to methods of making omni-directional semiconductor interconnect bridges. The present disclosure includes semiconductor assemblies including a mold layer having mold material, a first filler material dispersed in the mold material, and a second filler material dispersed in the mold material, wherein the second filler material is heterogeneously dispersed.

Omni directional interconnect with magnetic fillers in mold matrix

Embodiments disclosed herein include an electronic package. In an embodiment, the electronic package comprises a package substrate having a first surface and a second surface opposite from the first surface, and a die on the first surface of the package substrate. In an embodiment, the electronic package further comprises a socket interface on the second surface of the package substrate. In an embodiment, the socket interface comprises a first layer, wherein the first layer comprises a plurality of wells, a liquid metal within the plurality of wells, and a second layer over the plurality of wells.

Low force liquid metal interconnect solutions

Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

Enhanced base die heat path using through-silicon vias

A two-phase immersion cooling system for an integrated circuit assembly may be formed utilizing boiling enhancement structures formed on or directly attached to heat dissipation devices within the integrated circuit assembly, formed on or directly attached to integrated circuit devices within the integrated circuit assembly, and/or conformally formed over support devices and at least a portion of an electronic board within the integrated circuit assembly. In still a further embodiment, the two-phase immersion cooling system may include a low boiling point liquid including at least two liquids that are substantially immiscible with one another.

Immersion cooling for integrated circuit devices

An integrated circuit package includes a first die and second die above a substrate, and a vapor chamber above at least one of the first and second die. A vapor space within the vapor chamber is separated into at least a first section and a second section. The first section may be over the first die, and the second section may be over the second die, for example. The structure separating the first and second sections at least partly restricts flow of vapor between the first and second sections, thereby preventing or reducing thermal cross talk between the first and second dies. In some cases, an anisotropic thermal material is above one of the first or second die, wherein the anisotropic thermal material has substantially higher thermal conductivity in a direction of a heat sink than a thermal conductivity in a direction of a section of the vapor chamber.

Integrated heat spreader with enhanced vapor chamber for multichip packages

Techniques and mechanisms for promoting heat conduction in a packaged device using a heat spreader that is fabricated by a build-up process. In an embodiment, 3D printing of a heat spreader successively deposit layers of a thermal conductor material, where said layers variously extend each over a respective one or more IC dies. The heat spreader forms a flat top side, wherein a bottom side of the heat spreader extends over, and conforms at least partially to, different respective heights of various IC dies. In another embodiment, fabrication of a portion of the heat spreader comprises printing pore structures that contribute to a relatively low thermal conductivity of said portion. An average orientation of the oblong pores contributes to different respective thermal conduction properties for various directions of heat flow.

Printed heat spreader structures and methods of providing same

A second-level thermal interface material (TIM2) that is to couple to a system-level thermal solution is applied to an integrated circuit (IC) assembly comprising an IC die and an assembly substrate prior to the assembly substrate being joined to a host component at the system-level. Challenges associated with TIM2 application may therefore be addressed at a first level of IC die integration, simplifying subsequent assembly and better controlling thermal coupling to a subsequently applied thermal solution. Where a first-level IC assembly includes a stiffener, the TIM may be affixed to the stiffener through an adhesive bond or a fusion bond. After the IC assembly including the TIM is soldered to the host board, a thermal solution may be placed in contact with the TIM. With early application of a solder TIM, a solder TIM may be reflowed upon the IC die multiple times.

First-level integration of second-level thermal interface material for integrated circuit assemblies

A thermal interface structure may be formed comprising a thermally conductive substrate having a first surface and an opposing second surface, a first liquid metal layer on the first surface of the thermally conductive substrate, and a second liquid metal layer on the second surface of the thermally conductive substrate. The thermal interface structure may be used in an integrated circuit assembly or package between at least one integrated circuit device and a heat dissipation device.

Thermal interface structures for integrated circuit packages

An integrated circuit (IC) assembly comprising an IC die and a frame material that has been dispensed over the assembly substrate to be further adjacent to a perimeter edge of the IC die. The frame material may be selected to have flow properties that minimize slump, for example so a profile of a transverse cross-section through the frame material may retain convex curvature. The frame material may be cured following dispense, and upon application of a thermal interface material (TIM), the frame material may and act as a barrier, impeding flow of the TIM. The frame material may be compressed by force applied through an external thermal solution, such as a heat sink, to ensure good contact to the TIM.

IC assemblies including die perimeter frames suitable for containing thermal interface materials

Embodiments include semiconductor packages. A semiconductor package includes dies on a package substrate, an integrated heat spreader (IHS) with a lid and sidewalls over the dies and package substrate, and a heatsink and a thermal interface material respectively on the IHS. The semiconductor package includes a vapor chamber defined by a surface of the package substrate and surfaces of the lid and sidewalls, and a wick layer in the vapor chamber. The wick layer is on the dies, package substrate, and IHS, where the vapor chamber has a vapor space defined by surfaces of the wick layer and lid of the IHS. The sidewalls are coupled to the package substrate with a sealant that hermetically seals the vapor chamber with the surfaces of the package substrate and the sidewalls and lid. The wick layer has a uniform or non-uniform thickness, and has porous materials including metals, powders, or graphite.

Full package vapor chamber with IHS

To address technical problems facing silicon transient thermal management, a thermal interface material (TIM) may be used to provide improved thermal conduction. The TIM may include a liquid metal (LM) TIM, which may provide a significant reduction in thermal resistance, such as a thermal resistance R&#x2248;0.01-0.025&#xb0; C.-cm2/W. The LM TIM may be applied using a presoaked applicator, such as an open-cell polyurethane foam applicator that has been presoaked in a controlled amount of LM TIM. This LM presoaked applicator is then used to apply the LM TIM to one or more target thermal surfaces, thereby providing thermal and mechanical coupling between the LM TIM and the thermal surface. The resulting thermal surface and thermally conductive LM TIM may be used to improve thermal conduction for various silicon-based devices, including various high-power, high-performance system-on-chip (SoC) packages, such as may be used in portable consumer products.

Liquid metal thermal interface material application

Methods and apparatus are disclosed to provide electrical shielding for integrated circuit packages using a thermal interface material. An integrated circuit package includes a substrate including a ground plane layer and a solder mask; a semiconductor die attached to the substrate, the solder mask layer separating the semiconductor die from the ground plane layer; and a thermal interface material surrounding at least a portion of the semiconductor die, the thermal interface material electrically coupled to the ground plane layer.

Methods and apparatus to provide electrical shielding for integrated circuit packages using a thermal interface material

Growing community of inventors

Gilbert, AZ, United States of America

Kyle Jordan Arrington