Globalfoundries Singapore Pte. Ltd.

Kwee Liang Yeo

Huang Liu

Alex See

Chim Seng Seet

Hai Cong

Zheng Zou

Wen Zhan Zhou

Zhehui Wang

A device and methods for forming the device are disclosed. The method includes providing a substrate. A gate having a gate electrode and sidewall spacers are formed adjacent to sidewalls of the gate. A height Hof the gate is lower than a height Hof the sidewall spacers. A metal or metal alloy layer is deposited over the spacers, gate and the substrate. The substrate is processed to form metal silicide contact at least over the gate electrode. A top surface of the metal silicide contact over the gate electrode is about coplanar with a top of the sidewall spacer, and the difference between the height of the gate and spacers prevent formation of metal silicide filaments on top of the sidewall spacers.

Filament free silicide formation

Semiconductor devices and methods of making thereof are disclosed. The semiconductor device includes a substrate prepared with a first dielectric layer formed thereon. The dielectric layer includes at least first, second and third contact regions. A second dielectric layer is disposed over the first dielectric layer. The device also includes at least first, second and third via contacts disposed in the second dielectric layer. The via contacts are coupled to the respective underlying contact regions and the via contacts do not extend beyond the underlying contact regions.

Reliable interconnect for semiconductor device

Growing community of inventors

Singapore, Singapore

Kwee Liang Yeo