Samsung Electronics Co., Ltd.

Korea University Research and Business Foundation

Kwanyeob Chae

Jong-Ryun Choi

Jin-Ho Choi

Sanghune Park

Ji Hun Oh

Sanghoon Joo

Shinyoung Yi

Yoonjee Nam

Chulwoo Kim

Kyeongkeun Kang

Yoonjae Choi

Hyungkweon Lee

A semiconductor device is provided. The semiconductor device includes: an equalizer circuit configured to output a first control signal corresponding to a first bit of original two-bit data and a second control signal corresponding to a second bit of the original two-bit data; and a driver circuit including a plurality of pull-up transistors connected between an output node and a first power node configured to provide a first power supply voltage, and a plurality of pull-down transistors connected between the output node and a second power node configured to provide a second power supply voltage, wherein the second power supply voltage is lower than the first power supply voltage, and the driver circuit is connected to the equalizer circuit in series. The plurality of pull-up transistors includes a first pull-up transistor and a second pull-up transistor connected to each other in parallel, between the first power node and the output node, and a third pull-up transistor and a fourth pull-up transistor connected to each other in series, between the first power node and the output node.

Semiconductor device

A read margin control circuit is provided. The read margin control circuit includes a delay circuit that delays a data input/output signal and generates delay signals having different phases from each other, a sampler that samples the delay signals based on a data strobe signal to generate sampling values, and a determiner configured to determine a data valid window of the data input/output signal based on the sampling values.

Memory controller and operating method with read margin control circuit determining data valid window

A semiconductor chip including a plurality of input/output units includes: a plurality of additional pads disposed on a surface of the semiconductor chip, wherein the plurality of additional pads include at least one of a first additional pad to which a ground voltage is applied and a second additional pad to which a power supply voltage is applied; and a plurality of pads disposed on the surface of the semiconductor chip, wherein the plurality of pads include at least one of a first pad to which the ground voltage is applied and a second pad to which the power supply voltage is applied, and further include a third pad through which a signal is input and/or output. The at least one of the first additional pad and the second additional pad is disposed on an input/output unit where the third pad is disposed, among the plurality of input/output units.

Semiconductor chip including a plurality of pads

Read margin control circuit determining data valid window, memory controller including the same, and electronic device

An electronic circuit including: a first delay line circuit to generate a first data strobe by delaying a second data strobe, such that an edge of the first data strobe is aligned within a first time interval; and a sampling circuit to sample the first data signal at the edge of the first data strobe, wherein plural data signals include the first data signal and a second data signal, wherein timings of the plural data signals deviate from a reference timing of a reference data strobe by plural time lengths, wherein the first data signal deviates from the reference timing by a first time length of the plural time lengths, and wherein an edge of the second data strobe is aligned within a second time interval, wherein a timing of the second data signal deviates from the reference timing by a shortest time length of the plural time lengths.

Interface circuit for multi rank memory

An interface circuit may include a first FIFO circuit and a second FIFO circuit. The first FIFO circuit may generate first output data based on a first sampling signal and a second sampling signal. The second FIFO circuit may generate second output data based on a third sampling signal and a fourth sampling signal. The first FIFO circuit and the second FIFO circuit may be cross-reset.

Interface circuits configured to interface with multi-rank memory

Growing community of inventors

Hwaseong-si, South Korea

Kwanyeob Chae