Samsung Electronics Co., Ltd.

Kwangyoub Heo

Sang Ki Nam

Sunggil Kang

Kyuhee Han

Sungyong Lim

Vasily Pashkovskiy

Akira Koshiishi

Yeongkwang Lee

Beomjin Yoo

A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

Hollow cathode, an apparatus including a hollow cathode for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using a hollow cathode

Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

Plasma processing apparatus and method of manufacturing semiconductor device using the same

A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.

Plasma processing system, electron beam generator, and method of fabricating semiconductor device

Growing community of inventors

Yongin-si, South Korea

Kwangyoub Heo