Samsung Electronics Co., Ltd.

Kwang-sub Yoon

Sang-jun Choi

Sang-gyun Woo

Si-hyeung Lee

Hyun-woo Kim

Sook Jin Lee

Dong-won Jung

Ki-Yong Song

Shi-Yong Yi

Sang-Gyun Woo

Sang-Mun Chon

Kyoung-mi Kim

Jae-ho Kim

Baik-soon Choi

Sang-Kyu Park

Jung-hyeon Lee

Seung-Hyun Ahn

Dae-Joung Kim

Tae-sun Kim

Yeu-Young Youn

Eun-Mi Bae

Ki-young Kwon

Jae-Kyung Seo

Ji-myung Kim

Myeong-Cheol Kim

Ju-Youn Kim

Seong-woon Choi

Ji-Ho Kim

Young-Ju Park

Bong-cheol Kim

Seok-hwan Oh

Tae-Hwan Oh

Dong-Ki Yoon

In-Gu Yoon

Ki-Man Lee

Tae-hwa Jeong

Se-Young Park

Joo-Tae Moon

Young-Koog Han

Bum-Joon Youn

Woo-Seok Shim

Young-sik Park

Yu-Ra Kim

Yong-chul Kim

Sang-Duk Park

Gyu-min Jeong

A substrate can include a feature pattern included in an integrated circuit on the substrate and an in-situ metrology pattern spaced apart from the feature pattern on the substrate, the in-situ metrology pattern and the feature pattern both configured to have equal heights relative to a surface of the substrate.

Substrate target for in-situ lithography metrology, metrology method for in-situ lithography, and method of manufacturing integrated circuit device by using in-situ metrology

A photomask includes a focus metrology mark region that includes a plurality of focus monitor patterns. To measure a focal variation of a feature pattern formed on a substrate, a substrate target for lithography metrology including a focus metrology mark formed on the same level as the feature pattern is used. A lithography metrology apparatus includes a projection device including a polarizer; a detection device detecting the powers of &#xb1;n-order diffracted light beams from among output beams diffracted by the focus metrology mark of a to-be-measured substrate; and a determination device which determines, from a power deviation between the &#xb1;n-order diffracted light beams, defocus experienced by the feature pattern.

Photomask including focus metrology mark, substrate target including focus monitor pattern, metrology method for lithography process, and method of manufacturing integrated circuit device

In a method of manufacturing a semiconductor device, an isolation layer pattern is formed on a substrate to define a field region covered by the isolation layer pattern and first and second active regions that is not covered by the isolation layer pattern and protrudes from the isolation layer pattern. A first anti-reflective layer is formed on the isolation layer pattern. A first photoresist layer is formed on the first and second active regions of the substrate and the first anti-reflective layer. The first photoresist layer is partially etched to form a first photoresist pattern covering the first active region. Impurities are implanted into the second active region to form a first impurity region.

Methods of manufacturing semiconductor devices and electronic devices

In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

Method for fabricating semiconductor device

A method of manufacturing a layer pattern of a semiconductor device, the method including forming an anti-reflective coating (ARC) layer on an etching object layer such that the ARC layer includes a polymer having an imide group; forming a photoresist pattern on the ARC layer; wet etching portions of the ARC layer exposed by the photoresist pattern to form an ARC layer pattern; and etching the etching object layer using the photoresist pattern as an etch mask to form the layer pattern.

Methods of forming layer patterns of a semiconductor device

A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask.

Method of forming patterns of semiconductor device

A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Thinner composition and method of removing photoresist using the same

In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.

Optical element holder and projection exposure apparatus having the same

In a method of manufacturing a capacitor and a method of manufacturing a dynamic random access memory device, an insulating layer covering an upper portion of a conductive layer may be provided with an ozone gas so as to change the property of the upper portion of the insulating layer. The upper portion of the insulating layer may be chemically removed to expose the upper portion of the conductive layer. The exposed upper portion of the conductive layer may be removed so as to transform the conductive layer into a lower electrode. The remaining portion of the insulating layer may be removed, and an upper electrode may be formed on the lower electrode.

Method of manufacturing a capacitor and method of manufacturing a dynamic random access memory device using the same

A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.

Resist composition comprising photosensitive polymer having lactone in its backbone

Disclosed is a photosensitive polymer comprising pentafluoromethylvinyl ether derivative monomer having the formula: wherein R may be an alkoxy carbonyl, alkylsilane, a fluorine-substituted or unsubstituted C&#x2013;Calkyl carbonyl, a fluorine-substituted or unsubstituted C&#x2013;Ccycloalkylcarbonyl or a fluorine-substituted or unsubstituted benzoyl substituent group. The photosensitive polymer is the polymerization product of the pentafluoromethylvinyl ether derivative monomer and at least one additional monomer selected from the group consisting of (meth)acrylic acid, (meth)acrylate, styrene, norbornene, tetrafluoroethylene and maleic anhydride monomers. The photosensitive polymer may be used in photoresist compositions for exposure light sources having a predominant wavelength of less than 157 nm.

Photosensitive polymer including fluorine and resist composition containing the same

This invention is directed to a coating composition used for original equipment manufacturing or refinishing uses in the automotive industry, which coating composition utilizes an acrylic polymer which contains substituted or unsubstituted exomethylene lactones or lactams as a comonomer.

A photosensitive polymer including fluorine, a resist composition containing the same and a patterning method for IC fabrication using the resist composition are provided. The photosensitive polymer having at least one selected from the group consisting of fluorine-substituted or unsubstituted alkyl ester, tetrahydropyranyl ester, tetrahydrofuranyl ester, nitrile, amide, carbonyl and hexafluoro alkyl having a hydrophilic group, and a trifluorovinyl derivative monomer as a repeating unit and having a weight average molecular weight of about 3,000 to about 100,000. The photosensitive polymer exhibits high transmittance for a light source of F(157 nm), high dry etching resistance, and has characteristics suitable to realize an unitrafine pattern size.

Photosensitive polymer including fluorine, resist composition containing the same and patterning method using the resist composition

A photosensitive polymer comprises a fluorinated ethylene glycol group and a chemically amplified resist composition including the photosensitive polymer. The photosensitive polymer has a weight average molecular weight of about 3,000-50,000 having a repeating unit as follows:

Photosenseitive polymer having fluorinated ethylene glycol group and chemically amplified resist composition comprising the same

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Seoul, South Korea

Kwang-sub Yoon