Sandia Corporation

National Technology & Engineering Solutions of Sandia, LLC

Kurt W Larson

Jason W Wheeler

Hyrum Anderson

Jeffry Joseph Sniegowski

Randy J Shul

William A Zortman

Brandon R Rohrer

Jovana Helms

Various technologies for simultaneously making a plurality of modifications to a previously manufactured semiconductor are described herein. A mask layer is applied to a surface of the previously manufactured semiconductor device. A pattern is formed in the mask layer, where the pattern is aligned with a plurality of features of the semiconductor device that are desirably modified. Layers of the semiconductor device are etched based on the pattern to create a plurality of vias that each extend through one or more layers of the semiconductor device to a respective feature of the device. A conducting material is deposited into the vias to form a plurality of conducting plugs. Conducting material may be further deposited on the surface of the semiconductor device to connect plugs to one another and/or connect plugs to surface features of the device, thereby forming a plurality of new connections between features of the semiconductor device.

Method for simultaneous modification of multiple semiconductor device features

Systems and methods for conducting electron or scanning probe microscopy are provided herein. In a general embodiment, the systems and methods for conducting electron or scanning probe microscopy with an undersampled data set include: driving an electron beam or probe to scan across a sample and visit a subset of pixel locations of the sample that are randomly or pseudo-randomly designated; determining actual pixel locations on the sample that are visited by the electron beam or probe; and processing data collected by detectors from the visits of the electron beam or probe at the actual pixel locations and recovering a reconstructed image of the sample.

Sparse sampling and reconstruction for electron and scanning probe microscope imaging

Various technologies described herein pertain to compressive sensing electron microscopy. A compressive sensing electron microscope includes a multi-beam generator and a detector. The multi-beam generator emits a sequence of electron patterns over time. Each of the electron patterns can include a plurality of electron beams, where the plurality of electron beams is configured to impart a spatially varying electron density on a sample. Further, the spatially varying electron density varies between each of the electron patterns in the sequence. Moreover, the detector collects signals respectively corresponding to interactions between the sample and each of the electron patterns in the sequence.

Fast electron microscopy via compressive sensing

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Cedar Crest, NM, United States of America

Kurt W Larson