Euv Llc.

Kurt W Berger

A detector to measure EUV intensity employs a linear array of photodiodes. The detector is particularly suited for photolithography systems that includes: (i) a ringfield camera; (ii) a source of radiation; (iii) a condenser for processing radiation from the source of radiation to produce a ringfield illumination field for illuminating a mask; (iv) a reticle that is positioned at the ringfield camera's object plane and from which a reticle image in the form of an intensity profile is reflected into the entrance pupil of the ringfield camera, wherein the reticle moves in a direction that is transverse to the length of the ringfield illumination field that illuminates the reticle; (v) detector for measuring the entire intensity along the length of the ringfield illumination field that is projected onto the reticle; and (vi) a wafer onto which the reticle imaged is projected from the ringfield camera.

Reticle stage based linear dosimeter

Extreme ultraviolet light is detected using a universal in-band detector for detecting extreme ultraviolet radiation that includes: (a) an EUV sensitive photodiode having a diode active area that generates a current responsive to EUV radiation; (b) one or more mirrors that reflects EUV radiation having a defined wavelength(s) to the diode active area; and (c) a mask defining a pinhole that is positioned above the diode active area, wherein EUV radiation passing through the pinhole is restricted substantially to illuminating the diode active area.

Universal EUV in-band intensity detector

A device for the in-situ monitoring of EUV radiation flux includes an integrated reflective multilayer stack. This device operates on the principle that a finite amount of in-band EUV radiation is transmitted through the entire multilayer stack. This device offers improvements over existing vacuum photo-detector devices since its calibration does not change with surface contamination.

EUV mirror based absolute incident flux detector

Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

Growing community of inventors

Livermore, CA, United States of America

Kurt W Berger