Applied Materials, Inc.

Kurt Fredrickson

Ning Li

Mark Joseph Saly

Mihaela A Balseanu

Bhaskar Jyoti Bhuyan

Thomas Knisley

Tobin Kaufman-Osborn

Liqi Wu

Atashi Basu

David P Thompson

David Michael Thompson

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

Methods of selective atomic layer deposition

Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

Methods and precursors for selective deposition of metal films

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Sunnyvale, CA, United States of America

Kurt Fredrickson