Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuo-Liang Lu

Sheng-Liang Pan

Yu-Kung Hsiao

Chih-Kung Chang

Yang-Tung Fan

Bii-Cheng Chang

Yih-Ann Lin

Kai-Ming Ching

Bii-Junq Chang

Bii-Juno Chang

Cheng-Yuan Tsai

Chi-Hung Liao

Yao-Wen Chang

Yen-Liang Lin

Ru-Liang Lee

Cheng-Yu Chu

Hung-Jen Hsu

Fu-Tien Weng

Min-Chang Ching

Wen-Hsiang Tseng

Chih-Cheng Chiu

Chia-Wen Zhong

Fu-Tien Wong

Chin-Chen Kuo

Kuang-Peng Lin

Chung-Sheng Hsiung

Yu Hsi Wang

Tung-Heng Shie

B J Chang

Tung-Wen Hsieh

Sheng-Liang Pang

Bi-Cheng Chang

Wen-Song Tseng

Bii-Jung Chang

Sung-Yung Yang

Yung-Chih Yao

In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a conductive structure on a substrate. A removal process is performed to remove a portion of the dielectric layer to expose a portion of the conductive structure. The substrate is transported into a cleaning chamber having a wafer chuck below a bell jar structure. A cleaning process is performed to clean the exposed portion of the conductive structure by turning on a noble gas source to introduce a noble gas within the cleaning chamber, turning on an oxygen gas source to introduce oxygen within the cleaning chamber, applying a first bias to a plasma coil to form a plasma gas, and applying a second bias to the wafer chuck. The substrate is removed from the cleaning chamber. A conductive layer is formed over the dielectric layer and coupled to the conductive structure.

Cleaning chamber for metal oxide removal

A transmittance overcoat with effectively planar top surface and specified optical and materials properties is applied above a microlens layer to extend the focal length and enhance the performance of long focal length microlenses for semiconductor array color imaging devices. The geometrical optics design factors and microelectric fabrication sequence to achieve optimized long focal length microlens performance are disclosed. The principal advantages of the adaptive process taught in the present invention is shown to enable real-time compensation adjustments for process and material variations. The overcoat process enables simplified single-layer integrated microlens optics for low-cost, high volume manufacturing of CMOS and CCD color video cameras.

High transmittance overcoat for microlens arrays in semiconductor color imagers

A method of forming a bump structure through the use of an electroplating solution, comprising the following steps. A substrate having an overlying conductive structure is provided. A patterned dry film resist is formed over the conductive structure. The patterned dry film resist having a trench exposing a portion of conductive structure. The patterned dry film resist adhering to the conductive structure at an interface. The structure is treated with a treatment that increases the adherence of the patterned dry film resist to the conductive structure at the interface. A conductive plug is over the exposed portion of the conductive structure within the trench through the use of the electroplating solution. The increased adhesion of the patterned dry film resist to the conductive structure at the interface preventing the electroplating solution from penetrating the interface of the patterned dry film resist and the conductive structure during the formation of the conductive plug. The patterned dry film resist is removed from the conductive structure. The conductive plug is reflowed to form the bump structure.

Method to enhance the adhesion between dry film and seed metal

A new method to form passivation openings in the manufacture of an integrated circuit device is achieved. The passivation openings have gradually sloping sidewalls that allow a protective tape to be completely removed without leaving adhesive residue. A semiconductor substrate is provided. A passivation layer is deposited. An organic photoresist layer is deposited overlying the passivation layer. The organic photoresist layer is patterned to expose the passivation layer in areas where passivation openings are planned. The organic photoresist layer is reflowed to create gradually sloping sidewalls on the organic photoresist layer. The passivation layer is etched through to from the passivation openings. The passivation openings are thereby formed with gradually sloping sidewalls. The organic photoresist layer is stripped away. A protective tape is applied overlying the passivation layer and the passivation openings. The protective tape is removed. The gradually sloping sidewalls on the passivation openings allow the protective tape to be completely removed without leaving adhesive residue in the manufacture of the integrated circuit device.

Method to improve passivation openings by reflow of photoresist to eliminate tape residue

A transmittance overcoat with effectively planar top surface and specified optical and materials properties is applied above a microlens layer to extend the focal length and enhance the performance of long focal length microlenses for semiconductor array color imaging devices. The geometrical optics design factors and microelectronic fabrication sequence to achieve optimized long focal length microlens performance are disclosed. The principal advantages of the adaptive process taught in the present invention is shown to enable real-time compensation adjustments for process and material variations. The overcoat process enables simplified single-layer integrated microlens optics for lowcost, high volume manufacturing of CMOS and CCD color video cameras.

High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers

A method of cleaning particulates from a solution bath including at least partially filling a deionized water (DIW) bath for rinsing at least one wafer following chemically cleaning the at least one wafer; rinsing the at least one wafer; transferring the at least one wafer to a downstream process; at least partially draining the DIW from the DIW bath; at least partially filling the DIW bath with a bath cleaning solution; and, applying at least one source of ultrasonic energy to agitate the bath cleaning solution.

Method to remove particulate contamination from a solution bath

Pigment-based resists tend to give off a certain amount of organic vapor during exposure. This brings about contamination of the projection lens surface as well as other parts of the system. A method to monitor this accumulation of solvent vapor on the lens surface is disclosed, based on a test matrix (in which exposure time and focal distance are systematically varied) through which a series of images are formed in the resist and then evaluated for quality. A key feature is the test patterns that are used for forming the images. Said patterns are designed so as to maximize the total amount of diffraction that occurs during image formation, thereby maximizing sensitivity to changes in lens quality. Several examples of the test patterns are provided.

Method to monitor stepper lens quality in color filter process

A method of clearing photoresist on a wafer edge, including the following steps. A wafer having a upper exposed conductive layer is provided. The wafer having a center, an edge and a ring-shaped area proximate the wafer edge. A photoresist layer is formed upon the exposed conductive layer. The photoresist layer is removed from within the ring-shaped area by a rinse process to expose the conductive layer within the ring-shaped area. An oxygen diffusion barrier layer is formed over the photoresist layer.

Method to form the ring shape contact to cathode on wafer edge for electroplating in the bump process when using the negative type dry film photoresist

Within a method for forming a color filter image array optoelectronic microelectronic fabrication, and the color filter image array optoelectronic microelectronic fabrication formed employing the method, there is provided a substrate having formed therein a series of photo active regions. There is also formed over the substrate at least one color filter layer having formed therein a color filter region having a concave upper surface. There is also formed upon the at least one color filter layer and planarizing the at least one color filter region having the concave upper surface, a planarizing layer. The planarizing layer provides for enhanced resolution of the color filter image array optoelectronic microelectronic fabrication.

Color filter image array optoelectronic microelectronic fabrication with a planarizing layer formed upon a concave surfaced color filter region

A method of forming a bump on a substrate such as a semiconductor wafer or flip chip. The method includes the step of providing a semiconductor device having a contact pad and an upper passivation layer and an opening formed in the upper passivation layer exposing a portion of the contact pad. An under bump metallurgy is deposited over the upper passivation layer and the contact pad. A first photoresist layer is deposited in a liquid state so that the first photoresist layer covers the under bump metallurgy. A second photoresist layer is deposited and the second photoresist layer is a dry film photoresist. The unexposed portions of the first photoresist layer are removed. The remaining portions of the first photoresist layers are removed. The electrically conductive material is reflown to provide a bump on the semiconductor device.

Method of making a bump on a substrate using multiple photoresist layers

A process for reworking a non-reflowed, defective microlens element shape, of an image sensor device, without damage to an underlying spacer layer, or to underlying color filter elements, has been developed. The non-reflowed, microlens element shape, if defective and needing rework, is first subjected to a high energy exposure, converting the non-reflowed, microlens element shape to a acid type, microlens shape, then removed using a base type developer solution. Prior to formation of a reworked microlens element shape a baking cycle is employed to freeze, or render inactive, any organic residue still remaining on the surface of the spacer layer, after the base type developer removal procedure. Formation of the reworked, microlens element shape, followed by an anneal cycle, results in the desired rounded, microlens element, on the underlying spacer layer.

Rework procedure for the microlens element of a CMOS image sensor

Multi-microlens arrays for optimizing light collection efficiency in CCD/CMOS solid-state color image cameras with L-shaped or non-regular photodetector areas are disclosed. Microelectronic fabrication methods for forming planar array multi-microlenses comprised of elements consisting of lens-pairs, integrated with color-filters, and compatible with CMOS high-volume manufacturing are taught. Experimental results demonstrating the processes for fabrication of multi-microlenses for L-shaped and for non-regular sensing areas are given.

Multi-microlens design for semiconductor imaging devices to increase light collection efficiency in the color filter process

A method for preventing contamination in a plasma process chamber when the primary heating means for the chamber is turned off is provided. In the method, a heated gas is flown over the top chamber lid of the plasma process chamber. A suitable heated gas can be nitrogen gas that is heated to a temperature between about 100&deg; C. and about 150&deg; C.

Method for preventing contamination in a plasma process chamber

A method for alignment to an alignment mark array within a patterned electronic material layer, formed on a substrate employed in a microelectronics fabrication, with improved registration accuracy of a subsequent step-and-repeat photomask pattern. There is first provided a substrate upon which is formed a patterned microelectronics layer containing an alignment mark array. There is then formed over the substrate and patterned layer, covering over the alignment marks, a subsequent layer or layers which may be of opaque material. In order to align properly a patterned photomask for patterning the overlying layer by means of conventional photolithography, the alignment mark array is located by first scanning with a laser light source contained within a step-and-repeat apparatus containing the patterned photomask and detecting the optical radiation signal scattered from the alignment mark array. The accuracy of location may be enhanced by rotating the orientation of the alignment mark array with respect to the direction of scanning with the laser light source by 90 degrees to render the subsequent orientation orthogonal to the first orientation, and then repeating the scanning operation. The altered nature of the back-scattered light signal from the orthogonal scanning direction provides additional information for improving the precision of location and alignment.

Method for improved photomask alignment after epitaxial process through 90&deg; orientation change

A method for making long focal length micro-lens for color filters in CMOS image sensor applications and device made by the method are described. In the method, a layer of micro-lens material is first spin coated on top of a color filter, patterned by a photolithographic method into at least four discrete regions, and preferably at least nine discrete regions for each micro-lens with a pre-set spacing therein between. The discrete regions allow a smaller volume of micro-lens material to be used for forming the micro-lens in a subsequent reflow process. The micro-lens formed by the present invention novel method has a focal length of at least 7 &mgr;m, and preferably at least 10 &mgr;m such that a 0.35 &mgr;m technology CMOS image sensor utilizing two or three layers of metal conductors can be formed by the present invention method.

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Hsin-Chu, Taiwan

Kuo-Liang Lu