Apple Inc.

Kunzhong Hu

Jun Zhai

Chonghua Zhong

Sanjay Dabral

Vidhya Ramachandran

Mengzhi Pang

Kwan-Yu Lai

Jie-Hua Zhao

Shawn Searles

Joseph T DiBene, Ii

Zhitao Cao

Wei Chen

Se Young Yang

Raymundo M Camenforte

Bahattin Kilic

Suk-Kyu Ryu

Flynn P Carson

Thomas Hoffmann

Jung-Cheng Yeh

SivaChandra Jangam

Jiongxin Lu

Po-Hao Chang

Hsien-Che Lin

Ying-Chieh Ke

Semiconductor packages including an integrated heat spreader and methods of fabrication are described. In an embodiment, a semiconductor package includes a first package level, a second package level including one or more second-level chiplets, and a heat spreader bonded to the second package level with a metallic layer, which may include one or more intermetallic compounds formed by transient liquid phase bonding.

Thermally enhanced chip-on-wafer or wafer-on-wafer bonding

Package structure with folded die arrangements and methods of fabrication are described. In an embodiment, a package structure includes a first die and vertical interposer side-by-side. A second die is face down on an electrically connected with the vertical interposer, and a local interposer electrically connects the first die with the vertical interposer.

High bandwidth die to die interconnect with package area reduction

Stitched die packaging techniques and structures are described in which reconstituted chips are formed using wafer reconstitution and die-stitching techniques. In an embodiment, a chip includes a reconstituted chip-level back end of the line (BEOL) build-up structure to connect a die set embedded in an inorganic gap fill material.

Wafer reconstitution and die-stitching

Multiple component package structures are described in which an interposer chiplet is integrated to provide fine routing between components. In an embodiment, the interposer chiplet and a plurality of conductive vias are encapsulated in an encapsulation layer. A first plurality of terminals of the first and second components may be in electrical connection with the plurality of conductive pillars and a second plurality of terminals of first and second components may be in electrical connection with the interposer chiplet.

High density interconnection using fanout interposer chiplet

Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

Structure and method for sealing a silicon IC

Multiple chip module (MCM) structures are described. In an embodiment, a module includes a first and second components on the top side of a module substrate, a stiffener structure mounted on the top side of the module substrate, and a lid mounted on the stiffener structure and covering the first component and the second component. The stiffener is joined to the lid within a trench formed in a roof of the lid.

Multiple chip module trenched lid and low coefficient of thermal expansion stiffener ring

Electronic package structures and systems are described in which a 3D interconnect structure is integrated into a package redistribution layer and/or chiplet for power and signal delivery to a die. Such structures may significantly improve input output (IO) density and routing quality for signals, while keeping power delivery feasible.

High density 3D interconnect configuration

Structures and methods of forming fine die-to-die interconnect routing are described. In an embodiment, a package includes a package-level RDL than spans across a die set and includes a plurality of die-to-die interconnects connecting contact pads between each die. In an embodiment, the plurality of die-to-die interconnects is embedded within one or more photoimageable organic dielectric layers.

Very fine pitch and wiring density organic side by side chiplet integration

Multi-die structures and methods of fabrication are described. In an embodiment, a multi-die structure includes a first die, a second die, and die-to-die routing connecting the first die to the second die. The die-to-die interconnection may be monolithically integrated as a chip-level die-to-die routing, or external package-level die-to-die routing.

Selectable monolithic or external scalable die-to-die interconnection system methodology

Systems that include integrated circuit dies and voltage regulator units are disclosed. Such systems may include a voltage regulator module and an integrated circuit mounted in a common system package. The voltage regulator module may include a voltage regulator circuit and one or more passive devices mounted to a common substrate, and the integrated circuit may include a System-on-a-chip. The system package may include an interconnect region that includes wires fabricated on multiple conductive layers within the interconnect region. At least one power supply terminal of the integrated circuit may be coupled to an output of the voltage regulator module via a wire included in the interconnect region.

Structure and method for fabricating a computing system with an integrated voltage regulator module

Multi-chip systems and structures for modular scaling are described. In some embodiments an interfacing bar is utilized to couple adjacent chips. For example, a communication bar may utilized to coupled logic chips, and memory bar may be utilized to couple multiple memory chips to a logic chip.

Systems and methods for implementing a scalable system

Electronic packages and modules are described. In an embodiment, a hybrid thermal interface material including materials with different thermal conductivities is used to attach a lid to a device. In an embodiment, a low temperature solder material is included as part of an adhesion layer for attachment with a stiffener structure.

Growing community of inventors

Cupertino, CA, United States of America

Kunzhong Hu