Tokyo Electron Limited

Kunio Miyauchi

Tsuyoshi Moriya

Eiichi Nishimura

Hiroyuki Nakayama

Jun Yamawaku

Hidefumi Matsui

Shinichi Kawaguchi

A particle monitoring method of monitoring particles included in an exhaust gas from a depressurized processing vesselincludes counting the particles included in the exhaust gas from the depressurized processing vesselwhile cleaning an inside of the depressurized processing vesselby a particle monitor; creating a histogram showing a time and the number of particles from a result of the counting of the particles; extracting, from the histogram, a first feature amount indicating a correlation between a mode of the number of the particles and a particle counting period; and extracting, from the histogram, a second feature amount indicating a correlation between the particle counting period and a distribution tendency of the particles during the particle counting period.

Particle monitoring method and particle monitoring system

There is provided a support method for a particle distribution analysis for a substrate. In the support method, histogram data of inter-particle distances are created for all particles on a target substrate subjected to the particle distribution analysis from particle coordinate data of the target substrate. Further, histogram data of inter-particle distances are created for multiple virtual substrates each having the same number of randomly distributed particles as the particles on the target substrate. Based on a difference between the histogram data of the target substrate and the histogram data of each of the virtual substrates, determination data are created by quantifying a distance between the histogram data of the target substrate and the histogram data of the multiple virtual substrates, and the determination data are displayed on a display unit.

Particle distribution analysis method for computer readable storage medium for storing program for executing the method

There is provided a substrate cleaning method capable of cleaning a substrate on which a fine pattern is being formed in a short time with a simple configuration without having a harmful influence on the fine pattern. In the method, the substrate is transferred from a processing chamber for performing a process on the surface of the substrate therein to a cleaning chamber for cleaning the substrate therein. The substrate is cooled to a temperature in the cleaning chamber. A superfluid is supplied to the surface of the substrate, and contaminant components in the fine pattern are flowed out along with the superfluid as the superfluid flows over from the surface of the substrate.

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Nirasaki, Japan

Kunio Miyauchi