Nec Corporation

Kuniko Miyakawa

Ken Inoue

Kaoru Mikagi

Kunihiro Fujii

Yoshiaki Yamada

Nobukazu Ito

Kazuyuki Hirose

Michiko Yamanaka

A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in, the form of a substitutional solid solution.

C49-structured tungsten-containing titanium salicide structure and

A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not more than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not more than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in the form of a substitutional solid solution.

Method of forming C49-structure tungsten-containing titanium salicide

A method of burying a conductive metal into a contact hole formed in an insulation film formed over a silicon substrate. Within the contact hole a refractory metal silicide layer has been formed on the silicon substrate and a barrier metal layer has been formed on the refractory metal silicide layer and further a conductive metal film has been formed on the barrier metal layer. A top surface region of the conductive metal film is rapidly heated to a first temperature below a melting point of the conductive metal film and high enough so as to cause a semi-fluidization of only the top surface region of the conductive metal film so as to maintain an interface between the barrier metal layer and the conductive metal film at a second temperature which is lower than the first temperature and low enough so as to prevent any chemical reaction between the barrier metal layer and the conductive metal film and also maintain the refractory metal silicide layer and the silicon substrate to have temperatures lower than the second temperature so as to prevent silicon from being diffused through the barrier metal layer into the conductive metal film.

Method of burying a contact hole with a metal for forming multilevel

A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in the form of a substitutional solid solution.

C49-structured tungsten-containing titanium salicide structure

On a silicon substrate (1) is formed a MOS transistor which comprises a gate oxide film (3), a polysilicon gate electrode (4), an LDD diffusion layer (5) and a source/drain diffusion layer (7). A Ti film (8) is formed over the entire surface of the MOS transistor, the surface areas of the source/drain diffusion layer (7) and the polysilicon gate electrode (4) are silicified to form Ti silicide film (9, 10). Thereafter, W or Ta is ion-implanted as an alloy forming material into Ti silicide (10), and an anneal treatment is performed to react doped W or Ta with Ti silicide (10) and form TiW.sub.x Si.sub.y or TiTa.sub.x Si.sub.y (11).

Method of manufacturing semiconductor device

In a method of manufacturing a semiconductor device including a first and a second insulator film and a first and a second conductive layer held to the first and said second insulator films, respectively. The first insulator film is formed to have a first wiring trench along an upper surface of the first insulator film and a first through hole extending from the first wiring trench to a lower surface of the first insulator film. A first conductive material is deposited on the upper surface of the first insulator film to fill the first wiring trench and the first through hole. Thereafter, the first conductive material is partially removed to have an upper surface coplanar with the upper surface of the first insulator film. As a result, the first conductive material becomes the first wiring layer. Next, the second insulator film and the second wiring layer are formed in the manner which is similar to that of forming the first insulator film and the first wiring layer.

Method of manufacturing a semiconductor device through a reduced number

In a semiconductor device having a wiring groove in alignment with a contact hole, a wiring structure includes a diffusion preventing film formed on the bottom and side walls of the wiring groove, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu and an element which cooperates with Cu so as to form a eutectic Cu-alloy having a eutectic temperature of not higher than 850.degree. C. A Cu film is formed on the diffusion preventing film so as to fill up the wiring groove, so that Cu and the above mentioned element actually form the eutectic Cu-alloy having the eutectic temperature of not higher than 850.degree. C.

Eutectic Cu-alloy wiring structure in a semiconductor device

The present invention discloses a process for manufacturing a semiconductor device in which characteristics of an aluminum alloy film are prevented from deteriorating, when a titanium film is used as an under film and the aluminum alloy film is heated to fill a via hole therewith. Interlayered insulating film is formed on a first aluminum wire, and after the formation of a via hole which reaches the first aluminum wire, a titanium film and an aluminum alloy film are formed in turn by a sputtering process. Next, a silicon substrate is heated up to 450.degree. to 500.degree. C. to melt the aluminum alloy film, thereby filling the via hole therewith. In this case, the thickness of the titanium film is set to 10% or less of the thickness of the aluminum alloy film and at most 25 nm. In particular, in the case of the aluminum alloy film containing no silicon, the thickness of the titanium film is set to 5% or less of the thickness of the aluminum alloy film, whereby the deterioration of characteristics of the aluminum alloy film by titanium can be minimized, and the via hole can be surely filled therewith.

Process of manufacturing a semiconductor device by filling a via hole in

In this semiconductor device, contact holes extending from a lower interconnection layer containing diffusion layers at the surface of a Si substrate to an Al-involved interconnection layer formed above the Sis substrate through the intermediation of an interlayer dielectric film are filled with Al alloy having a eutectic point lower than that of Al-Si alloy. Then, for example, an Al-Ge alloy is sputtered, reflowed and allowed to react with the Si film to convert into an Al-Ge-Si alloy. At the stage of forming the Al-Ge-Si alloy, the reflow ceases. This brings the reduction of junction leakage current from the diffusion layers. Similarly in the case of a high aspect ratio of contact hole, this technique enables the contact hole to be fully filled with the above-mentioned Al alloy. Besides this technique enables direct interconnections in multilayer Al-involved interconnection structure of between an upper-layer Al-involved interconnection and diffusion layers, contributing to reduction of area required for interconnections.

Semiconductor memory device

In this semiconductor device, contact holes extending from a lower interconnection layer containing diffusion layers at the surface of a Si substrate to an Al-involved interconnection layer formed above the Si substrate through the intermediation of an interlayer dielectric film are filled with Al alloy having an eutectic point lower than that of Al-Si alloy. Then, for example, an Al-Ge alloy is sputtered, reflowed and allowed to react with the Si film to convert into an Al-Ge-Si alloy. At the stage of forming the Al-Ge-Si alloy, the reflow ceases. This brings the reduction of junction leakage current from the diffusion layers. Similarly in the case of a high aspect ratio of contact hole, this technique enables to fully fill the contact hole with the above-mentioned Al alloy. Besides this technique enables direct interconnections in multilayer Al-involved interconnection structure of between an upper-layer Al-involved interconnection and diffusion layers, contributing to reduction of area required for interconnections.

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Tokyo, Japan

Kuniko Miyakawa