Central Glass Company, Limited

Tokyo Electron Limited

Kokusai Electric Corporation

Kunihiro Yamauchi

Akifumi Yao

Jun Lin

Mitsuhiro Tachibana

Akiou Kikuchi

Koji Takeya

Takashi Masuda

Tatsuo Miyazaki

Kenji Kameda

Masaya Nagato

Kazuaki Nishimura

Yuta Takeda

Susumu Yamauchi

Shinichi Kawaguchi

Yuuta Takeda

Hikaru Kitayama

The present disclosure aims to provide a surface treatment method using a gas composition capable of removing a metal nitride at low temperatures without using plasma. The present disclosure relates to a surface treatment method including bringing a β-diketone and NOinto contact with a surface of a workpiece.

Surface treatment method, dry etching method, cleaning method, semiconductor device manufacturing method, and etching device

A dry etching method according to an embodiment of the present disclosure includes reacting an etching target film formed on a surface of a workpiece with a β-diketone and nitrogen dioxide to etch the etching target film in a non-plasma state, the etching target film containing a metal having an M-O bond energy of 5 eV or higher or an oxide of the metal.

Dry etching method, method for producing semiconductor device, and etching device

The dry etching method of the present invention etches a metal film formed on a surface of a workpiece by bringing etching gases each containing a &#x3b2;-diketone into contact with the metal film. The method includes: a first etching step of bringing a first etching gas containing a first &#x3b2;-diketone into contact with the metal film; and a second etching step of bringing a second etching gas containing a second &#x3b2;-diketone into contact with the metal film after the first etching step. The first &#x3b2;-diketone is a compound capable of forming a first complex through a reaction with the metal film. The second &#x3b2;-diketone is a compound capable of forming a second complex having a lower sublimation point than the first complex through a reaction with the metal film.

Dry etching method, method for manufacturing semiconductor device, and etching device

Disclosed is a dry etching method for etching a metal film on a substrate with an etching gas containing a &#x3b2;-diketone and an additive gas, wherein the metal film contains a metal element capable of forming a complex with the &#x3b2;-diketone; and wherein the amount of water contained in the etching gas is 30 mass ppm or less relative to the amount of the &#x3b2;-diketone. It is preferable that the &#x3b2;-diketone used for the dry etching method is supplied from a &#x3b2;-diketone filled container, wherein the &#x3b2;-diketone filled container has a sealed container body filled with a &#x3b2;-diketone whose water content is 15 mass ppm or less relative to the &#x3b2;-diketone. This etching method enables etching of the metal film while suppressing etching rate variations from the initial stage to the later stage of use of the filled container.

Dry etching method and &#x3b2;-diketone-filled container

The etching method of the present invention includes the step of supplying a first mixed gas containing a &#x3b2;-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a &#x3b2;-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

Etching method and etching device

Disclosed is a dry etching method for etching a metal film on a substrate with the use of an etching gas, wherein the etching gas contains a &#x3b2;-diketone and first and second additive gases; wherein the metal film contains a metal element capable of forming a complex with the &#x3b2;-diketone; wherein the first additive gas is at least one kind of gas selected from the group consisting of NO, NO, Oand O; wherein the second additive gas is at least one kind of gas selected from the group consisting of HO and HO; wherein the amount of the &#x3b2;-diketone contained is 10 vol % to 90 vol % relative to the etching gas; and wherein the amount of the second additive gas contained is 0.1 vol % to 15 vol % relative to the etching gas. The etching rate of the metal film is increased by this etching method.

A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is &#x3b2;-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.

Naturally oxidized film removing method and naturally oxidized film removing device

There is provided a cleaning method improving cleaning efficiency in a process container after an oxygen-containing film forming process is having performed, including: (a) supplying at least a hydrogen fluoride gas into the process container; and (b) supplying an alcohol into the process container in a state where supply of the hydrogen fluoride gas into the process container is stopped, wherein (a) and (b) are continuously performed without providing an intermittent period therebetween.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and a non-transitory computer-readable recording medium

An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing &#x3b2;-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250&#xb0; C.

Growing community of inventors

Ube, Japan

Kunihiro Yamauchi