Tokyo Electron Limited

Kunihiro Tada

Hayashi Otsuki

Yasuo Kobayashi

Satoshi Wakabayashi

Hideki Yoshikawa

Seishi Murakami

Kensaku Narushima

Kimihiro Matsuse

Yoshihiro Tezuka

Tatsuo Hatano

Gerrit J Leusink

Kenji Suzuki

Hideaki Yamasaki

David L O'Meara

Toshio Hasegawa

Hiroyuki Miyashita

Kazuichi Hayashi

Katsuhito Hirose

Isao Gunji

Takeshi Shinohara

A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.

Deposition device and deposition method

A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios.

Method of forming conformal metal silicide films

A Ti film is formed on a surface of a wafer W placed inside a chamber, while injecting a process gas containing TiClgas into the chamberfrom a showerheadmade of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerheadat a temperature of 300&#xb0; C. or more and less than 450&#xb0; C., and setting TiClgas at a flow rate of 1 to 12 mL/min (sccm) or setting TiClgas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber, while setting the showerheadat a temperature of 200 to 300&#xb0; C., and supplying ClFgas into the chamber

Ti-containing film formation method and storage medium

Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

Substrate processing method and substrate processing apparatus

A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (A) on which a wafer (W) is placed has a plurality of areas (Aa,Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (Aa) embedded in one area (Aa) of adjacent areas has a part (Aa) extending in the other area (Ab) of the adjacent areas, and the heater (Ab) embedded in the other area (Ab) of the adjacent areas has a part (Ab) extending in the one area (Aa).

Processing apparatus and heater unit

A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.

Method for forming Ti film and TiN film, contact structure, computer readable storing medium and computer program

A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiClgas, Hgas, Ar gas and SiHgas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500&#xb0; C. or below during the deposition of the Ti film. The flow rate of the SiHgas is from 30 to 70% of the flow rate of the TiClgas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

Method of forming titanium film by CVD

A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiClgas, a silicon hydride gas and NHgas are used as source gases for forming the TiSiN film by the thermal CVD process. TiClgas, a silicon hydride gas, Hgas and Ngas are used as source gases for forming a TiSiN film by the plasma CVD process.

TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system

Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film

A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiClgas, Hgas, Ar gas and SiHgas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500&#xb0; C. or below during the deposition of the Ti film. The flow rate of the SiHgas is from 30 to 70% of the flow rate of the TiClgas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the contact resistance of the titanium film is reduced. The method comprises the steps of forming a titanium film on the surface of the substrate using a first process gas containing TiCl and a reducing gas, subjecting the substrate to a plasma process using a second process gas containing N gas and a reducing gas, thereby decreasing Cl in the titanium film and nitriding the surface of the titanium film to form a nitride layer, and forming a barrier metal (e.g., a titanium nitride film) on the titanium film having the nitride layer. Thus, the titanium film and the titanium nitride film are formed on the substrate by lamination. The second process gas contains N gas in a ratio of 0.5 or lower with respect to the reducing gas.

Method of forming a titanium film and a barrier film on a surface of a substrate through lamination

A Ti film is formed by chemical vapor deposition in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl gas, H gas, Ar gas and SiH gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at a temperature of from 550 to 700&deg; C. during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

Method of forming titanium film by chemical vapor deposition

A method of forming a CVD-Ti film includes the steps of loading a Si wafer into a chamber, setting an interior of the chamber at a predetermined reduced-pressure atmosphere, introducing TiCl,gas, H,gas, and Ar gas into the chamber, and generating a plasma of the introduced gas in the chamber to form a Ti film in a hole formed in an SiO,film on the wafer. A wafer temperature is set to 400&deg; to 800&deg;, a supplied power is set to 100 W to 300 W, an internal chamber pressure is set to 0.5 Torr to 3.0 Torr, a flow rate ratio of TiCl,gas to a sum of H,gas and Ar gas is 1:100 to 1:300, and a flow rate ratio of H,gas to Ar gas is 1:1 to 2:1.

CVD-Ti film forming method

A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl,gas, H,gas, Ar gas and SiH,gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 550&deg; C. or above during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

In a process of forming a metal film, when metal wiring is formed on a diffusion layer (an electrode, etc.) of a circuit element formed on a silicon semiconductor wafer, a Ti film is deposited on a surface of a processed body by PECVD using TiCl.sub.4 gas and H.sub.2 gas as material gas. A Ti--Si--N film is formed on the diffusion layer surface by adding N.sub.2 gas to the material gas, and the Ti film is formed subsequently on the Ti--Si--N film. The Ti--Si--N film suppresses diffusion of silicon from the semiconductor wafer side.

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Nirasaki, Japan

Kunihiro Tada