Tokyo Seimitsu Co., Ltd.

Kunihiko Chiba

Hiroshi Nishimura

Ken Kato

Yuichi Ozawa

Yasuhito Iguchi

Seiichi Ohta

A probe device of the present invention measures a position of every chip in a wafer to be inspected to acquire the position as actual measurement data. Then, the probe device calculates a variation amount of an actual measurement position of each chip or a variation amount of a position at which a probe is brought into contact with the each chip of the wafer on the basis of the actual measurement data, and allows a monitor to display a range-of-variation display image that visually displays the variation amount. In the image, a quadrangular area corresponding to the each chip is displayed, and a dot is displayed in each the quadrangular area at a position shifted from a center position thereof in accordance with the variation amount.

Probe device for testing electrical characteristics of semiconductor element

The present invention provides a probe device that includes an alignment utility function. When a user inputs a condition value for a variation amount (variation range) of a contact position at which a probe is in contact with each chip, in a simulation using actual measurement data acquired by measuring a position of each of all chips in one wafer, a range of variation of each chip is calculated by changing a measurement point at which alignment is performed to calculate a setting of optimum measurement points so that the range of variation is equal to or less than the condition value and the number of measurement points is minimum. Then information on the optimum measurement point is provided to the user.

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Tokyo, Japan

Kunihiko Chiba