Nippon Chemical Industrial Co., Ltd.

Nippon Paper Industries Co., Ltd.

Speedfam Co Ltd

Kuniaki Maejima

Hiroaki Tanaka

Shinsuke Miyabe

Masahiro Izumi

Tsutomu Naito

Masaru Kishida

Tomohiro Banda

Keiji Monbetsu

Shigeki Yamagata

The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing.

Polishing composition for semiconductor wafer and polishing method

The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.

Polishing composition for semiconductor wafer, method for production thereof and polishing method

The present invention provides silicic acid hydrate having a large pore volume and tiny particle diameters, and a process for preparing it. There is disclosed silicic acid hydrate obtained by neutralizing an aqueous solution of sodium silicate with a mineral acid, which has particle properties represented by an oil absorption of 250 to 350 ml/100 g, a total pore volume of 4.0 to 6.0 cc/g, an average pore radius of 200 to 400 .ANG., and an average pore diameter of 3.0 to 15 .mu.m by the laser method, or 2.0 to 4.0 .mu.m by the coulter method, or 0.5 to 3.5 .mu.m by the centrifugal precipitation method.

Process for preparing silicic acid hydrate

Growing community of inventors

Tokyo, Japan

Kuniaki Maejima