Ebara Corporation

Kuniaki Horie

Yuji Araki

Tsutomu Nakada

Junichiro Yoshioka

Hidenao Suzuki

Yugang Guo

Masahito Abe

Satoshi Morikami

Takeshi Murakami

Naoaki Ogure

Kiwamu Tsukamoto

Hiroyuki Ueyama

Yukio Fukunaga

Akira Fukunaga

Takao Kato

Akihisa Hongo

Fumio Kuriyama

Mitsunao Shibasaki

Hiroyuki Shinozaki

Hiroshi Nagasawa

Makoto Kubota

Tohru Satake

Hiroshi Nagasaka

Shinji Kajita

Momoko Kakutani

Kenji Kamoda

Shinya Uemura

Hirotake Yamagishi

The present invention is to provide a substrate holder which can effect a more complete sealing with a sealing member and makes it possible to take a substrate out of the substrate holder easily and securely, and also a plating apparatus provided with the substrate holder. The substrate holder includes: a fixed holding member and a movable holding member for holding a substrate therebetween; a sealing member mounted to the fixed holding member or the movable holding member; and a suction pad for attracting a back surface of the substrate held between the fixed holding member and the movable holding member.

Electrochemical deposition method

Electrochemical deposition apparatus

Substrate holder and plating apparatus

The present invention relates to a method of and an apparatus for forming a thin metal film of copper, silver, or the like on a surface of a semiconductor or another substrate. A method of forming a thin metal film, comprises preparing a dispersed liquid having a metal-containing organic compound dispersed in a predetermined solvent, coating the dispersed liquid on a surface of a substrate and evaporating the solvent to form a coating layer, and applying an energy beam to the coating layer to decompose away an organic substance contained in the coating layer in an area irradiated with the energy beam and bond metal contained in the coating layer.According to the present invention, it is possible to form a thin metal film of good quality efficiently and stably. The thin metal film used as metal interconnects in highly integrated semiconductor circuits contributes to the progress of a process of fabricating semiconductor devices.

Method and apparatus for forming thin film of metal

There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.

Coating, modification and etching of substrate surface with particle beam irradiation of the same

A thin film of metal or metal compound is produced by preparing an ultrafine particle dispersion liquid by dispersing ultrafine particles at least partly made of metal into a given organic solvent, applying the ultrafine particle dispersion liquid to a substrate, drying the ultrafine particle dispersion liquid to leave metal or metal compound particles on the substrate, heating the metal or metal compound particles to join the metal or metal compound particles, and annealing the metal or metal compound particles into a thin film.

Method and apparatus of producing thin film of metal or metal compound

The present invention relates particularly to a method of and an apparatus for forming a fine interconnection in a highly integrated circuit formed on a semiconductor substrate. The method has the steps of preparing a substrate having fine recesses formed in a surface thereof, dispersing ultrafine particles made at least partly of a metal in a predetermined solvent, producing an ultrafine particle dispersed liquid, supplying the ultrafine particle dispersed liquid to the fine recesses of the substrate, heating the substrate to melt and bond the metal, and chemical mechanical polishing the surface of the substrate to remove an excessively attached metal therefrom. According to the present invention, it is possible to stably deposit an interconnection metal of good quality using an inexpensive material.

Method of and apparatus for forming interconnection

A trap apparatus is optimum for trapping a material gas discharged from a vapor deposition apparatus for depositing in a vapor phase thin films of high-dielectric or ferroelectric such as barium/strontium titanates on substrates. The trap apparatus is disposed downstream of a vacuum process chamber. The vacuum process chamber is for processing a substrate. The trap apparatus is for trapping a component having a low vapor pressure contained in a gas discharged from the vacuum process chamber. The trap apparatus includes a trap container for introducing the gas discharged from the vacuum process chamber, and a cooling device provided in the trap container for cooling the gas to a temperature equal to or lower than a condensing temperature of a gas component which is contained in the gas and easily liquidized.

Trap apparatus

The present invention relates to a method and apparatus for forming interconnects on a substrate such as a semiconductor wafer by filling a conductive material such as copper (Cu) in fine recesses formed in a surface of the substrate. A method for forming interconnects comprises providing a substrate and a target composed of a conductive material in confrontation with each other in a chamber, introducing a sputtering gas into the chamber while a high voltage is applied between the substrate and the target to cause the sputtering gas to collide with the target, and depositing particles of the conductive material emitted from the target on the surface of the substrate to form a thin film, while sputter-etching the thin film by reflection sputtering gas molecules reflected from the target and having high energy.

High energy sputtering method for forming interconnects

Growing community of inventors

Tokyo, Japan

Kuniaki Horie