Taiwan Semiconductor Manufacturing Comp. Ltd.

Kun-Mao Wu

Yu-Lung Yeh

Kuan-Chi Tsai

Chih-Hsun Lin

Ching-Hung Kao

Tzy-Kuang Lee

Meng-Chang Ho

Pei-Jen Wang

A method of forming a capacitor is disclosed. The method includes forming a portion of a metallization layer on a substrate, forming a via layer on the substrate, and forming a first electrode between the metallization layer and the via layer, where the first electrode is electrically connected to the metallization layer. The method also includes forming a second electrode between the metallization layer and the via layer, where the second electrode is electrically connected to the via layer, and forming a dielectric layer between the first electrode and the second electrode, where the first electrode is not electrically connected to any other conductors other than through the metallization layer, and where the second electrode is not electrically connected to any conductors other than through the via layer.

High density capacitor

A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.

Forming metal-insulator-metal capacitors over a top metal layer

Growing community of inventors

Pingzhen, Taiwan

Kun-Mao Wu